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Ibrahim ahmad
Ibrahim ahmad
Universiti Tenaga nasional, universiti kebangsaan Malaysia
Correu electrònic verificat a uniten.edu.my
Títol
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Optimization of PV-wind-hydro-diesel hybrid system by minimizing excess capacity
JA Razak, K Sopian, Y Ali, MA Alghoul, A Zaharim, I Ahmad
European Journal of Scientific Research 25 (4), 663-671, 2009
982009
Effect of wafer thinning methods towards fracture strength and topography of silicon die
HH Jiun, I Ahmad, A Jalar, G Omar
Microelectronics reliability 46 (5-6), 836-845, 2006
642006
Solar absorption refrigeration system using new working fluid pairs
JM Abdulateef, K Sopian, MA Alghoul, MY Sulaiman, A Zaharim, I Ahmad
International journal of Energy 1 (3), 82-87, 2007
382007
Effect of Laminated Wafer Toward Dicing Process and Alternative Double Pass Sawing Method to Reduce Chipping
GO Hoh Huey Jiun, Ibrahim Ahmad, Azman Jalar
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, VOL. 29, NO. 1 …, 2006
36*2006
Accumulation of heavy metals in wild plants collected from the industrial sites—potential for phytoremediation
I Ahmad, I Gul, S Irum, M Manzoor, M Arshad
International Journal of Environmental Science and Technology 20 (5), 5441-5452, 2023
302023
HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure release
AA Hamzah, BY Majlis, I Ahmad
Journal of the Electrochemical Society 154 (8), D376, 2007
292007
Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators
I Ahmad, YK Ho, BY Majlis
Semiconductor Physics Quantum Electronics & Optoelectronics, 2006
292006
Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
NB Atan, IB Ahmad, BBY Majlis
2014 IEEE international conference on semiconductor electronics (ICSE2014 …, 2014
252014
Simulation of fabrication process VDMOSFET transistor using Silvaco software
H Abdullah, J Jurait, A Lennie, ZM Nopiah, I Ahmad
European Journal of Scientific Research 29 (4), 461-470, 2009
242009
Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari
Materials Science in Semiconductor Processing 17, 155-161, 2014
232014
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
I Ahmad, S Shaari, HA Elgomati, F Salehuddin
Journal of Physics: Conference Series 431 (1), 012026, 2013
232013
Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device
IA Fauziyah Salehuddin, FA Hamid, A Zaharim
International Journal of Engineering & Technology (IJET) 9 (10), 94-98, 2009
232009
Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method
AM AH, PS Menon, I Ahmad, S Shaari
Penerbit UTM Press, 2014
222014
Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometer
AA Hamzah, J Yunas, BY Majlis, I Ahmad
Sensors 8 (11), 7438-7452, 2008
222008
High purity polycrystalline silicon growth and characterization
U Hashim, AA Ehsan, I Ahmad
Chiang Mai J Sci 34 (1), 47-53, 2007
212007
The effects of multiple zincation process on aluminum bond pad surface for electroless nickel immersion gold deposition
MK Md Arshad, I Ahmad, A Jalar, G Omar, U Hashim
212006
Modeling of 14 nm gate length n-Type MOSFET
ZAN Faizah, I Ahmad, PJ Ker, PSA Roslan, AHA Maheran
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015
182015
Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
F Salehuddin, I Ahmad, FA Hamid, A Zaharim, U Hashim, PR Apte
International Journal of the Physical Sciences 6 (30), 7026-7034, 2011
182011
Numerical study of fluid flow and heat transfer in microchannel heat sinks using anisotropic porous media approximation
FY Lim, S Abdullah, I Ahmad
Asian Network for Scientific Information, 2010
182010
Characterization of screen printed BaTiO3 thick film humidity sensor
R Wagiran, WW Zaki, WSM Noor, AH Shaari, I Ahmad
Int. J. Eng. Technol 2 (1), 22-26, 2005
182005
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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