Articles amb requisits d'accés públic - Vinod K. SangwanMés informació
No estan disponibles en cap lloc: 8
Solution-based processing of monodisperse two-dimensional nanomaterials
J Kang, VK Sangwan, JD Wood, MC Hersam
Accounts of chemical research 50 (4), 943-951, 2017
Requisits: US National Science Foundation, US Department of Defense
Suppressing ambient degradation of exfoliated InSe nanosheet devices via seeded atomic layer deposition encapsulation
SA Wells, A Henning, JT Gish, VK Sangwan, LJ Lauhon, MC Hersam
Nano letters 18 (12), 7876-7882, 2018
Requisits: US National Science Foundation, German Research Foundation
Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz
VK Sangwan, J Kang, D Lam, JT Gish, SA Wells, J Luxa, JP Male, ...
Nano Research 14, 1961-1966, 2021
Requisits: US National Science Foundation
Tunable radiation response in hybrid organic–inorganic gate dielectrics for low-voltage graphene electronics
HN Arnold, CD Cress, JJ McMorrow, SW Schmucker, VK Sangwan, ...
ACS Applied Materials & Interfaces 8 (8), 5058-5064, 2016
Requisits: US National Science Foundation, US National Aeronautics and Space Administration
Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2/Graphene Mixed-Dimensional Heterostructures
X Liu, I Balla, VK Sangwan, H Usta, A Facchetti, TJ Marks, MC Hersam
Chemistry of Materials 31 (5), 1761-1766, 2019
Requisits: US National Science Foundation, US Department of Defense
Tailoring the optical response of pentacene thin films via templated growth on hexagonal boron nitride
SH Amsterdam, T LaMountain, TK Stanev, VK Sangwan, ...
The Journal of Physical Chemistry Letters 12 (1), 26-31, 2020
Requisits: US National Science Foundation, US Department of Defense
Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K2Bi8Se13
SM Islam, VK Sangwan, D Bruce Buchholz, SA Wells, L Peng, L Zeng, ...
Journal of the American Chemical Society 143 (16), 6221-6228, 2021
Requisits: US National Science Foundation, US Department of Energy
Ohmic‐contact‐gated carbon nanotube transistors for high‐performance analog amplifiers
WA Gaviria Rojas, ME Beck, VK Sangwan, S Guo, MC Hersam
Advanced Materials 33 (34), 2100994, 2021
Requisits: US National Science Foundation
Disponibles en algun lloc: 76
Effective passivation of exfoliated black phosphorus transistors against ambient degradation
JD Wood, SA Wells, D Jariwala, KS Chen, EK Cho, VK Sangwan, X Liu, ...
Nano letters 14 (12), 6964-6970, 2014
Requisits: US Department of Energy
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
VK Sangwan, HS Lee, H Bergeron, I Balla, ME Beck, KS Chen, ...
Nature 554 (7693), 500-504, 2018
Requisits: US National Science Foundation, US Department of Defense, Natural Sciences …
Neuromorphic nanoelectronic materials
VK Sangwan, MC Hersam
Nature nanotechnology 15 (7), 517-528, 2020
Requisits: US National Science Foundation
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
D Jariwala, VK Sangwan, DJ Late, JE Johns, VP Dravid, TJ Marks, ...
Applied Physics Letters 102 (17), 2013
Requisits: Department of Science & Technology, India
Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS2
D Jariwala, SL Howell, KS Chen, J Kang, VK Sangwan, SA Filippone, ...
Nano letters 16 (1), 497-503, 2016
Requisits: US National Science Foundation, US Department of Energy
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
IS Kim, VK Sangwan, D Jariwala, JD Wood, S Park, KS Chen, F Shi, ...
ACS nano 8 (10), 10551-10558, 2014
Requisits: US National Institutes of Health
Electronic transport in two-dimensional materials
VK Sangwan, MC Hersam
Annual review of physical chemistry 69 (1), 299-325, 2018
Requisits: US National Science Foundation
Crystallography, morphology, electronic structure, and transport in non-fullerene/non-indacenodithienothiophene polymer: Y6 solar cells
W Zhu, AP Spencer, S Mukherjee, JM Alzola, VK Sangwan, ...
Journal of the American Chemical Society 142 (34), 14532-14547, 2020
Requisits: US National Science Foundation, US Department of Energy, US Department of …
Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells
C Liu, Y Yang, H Chen, J Xu, A Liu, ASR Bati, H Zhu, L Grater, SS Hadke, ...
Science 382 (6672), 810-815, 2023
Requisits: US National Science Foundation, US Department of Defense, Canadian …
Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS2 van der Waals Heterojunction
S Bettis Homan, VK Sangwan, I Balla, H Bergeron, EA Weiss, MC Hersam
Nano letters 17 (1), 164-169, 2017
Requisits: US National Science Foundation, US Department of Energy, Natural Sciences …
Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks
AM Evans, A Giri, VK Sangwan, S Xun, M Bartnof, CG Torres-Castanedo, ...
Nature materials 20 (8), 1142-1148, 2021
Requisits: US National Science Foundation, US Department of Energy, US Department of …
Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
SL Howell, D Jariwala, CC Wu, KS Chen, VK Sangwan, J Kang, TJ Marks, ...
Nano letters 15 (4), 2278-2284, 2015
Requisits: US Department of Energy
Les dades de publicació i de finançament es determinen automàticament per mitjà d'un programa informàtic