Temperature-dependent phonon shifts in monolayer MoS2 NA Lanzillo, A Glen Birdwell, M Amani, FJ Crowne, PB Shah, S Najmaei, ...
Applied Physics Letters 103 (9), 2013
285 2013 Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition M Amani, ML Chin, AG Birdwell, TP O’Regan, S Najmaei, Z Liu, ...
Applied Physics Letters 102 (19), 2013
284 2013 Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
272 2016 Electrical transport properties of polycrystalline monolayer molybdenum disulfide S Najmaei, M Amani, ML Chin, Z Liu, AG Birdwell, TP O’Regan, ...
ACS nano 8 (8), 7930-7937, 2014
157 2014 Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length MV Fischetti, TP O'Regan, S Narayanan, C Sachs, S Jin, J Kim, Y Zhang
IEEE Transactions on Electron Devices 54 (9), 2116-2136, 2007
145 2007 Theoretical study on strain-induced variations in electronic properties of monolayer MoS2 L Dong, RR Namburu, TP O’Regan, M Dubey, AM Dongare
Journal of Materials Science 49, 6762-6771, 2014
82 2014 Blueshift of the FJ Crowne, M Amani, AG Birdwell, ML Chin, TP O’Regan, S Najmaei, ...
Physical Review B—Condensed Matter and Materials Physics 88 (23), 235302, 2013
51 2013 Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets L Dong, AM Dongare, RR Namburu, TP O'Regan, M Dubey
Applied Physics Letters 104 (5), 2014
49 2014 Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications PB Shah, M Amani, ML Chin, TP O’regan, FJ Crowne, M Dubey
Solid-state electronics 91, 87-90, 2014
45 2014 Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system ML Chin, P Periasamy, TP O'Regan, M Amani, C Tan, RP O'Hayre, ...
Journal of Vacuum Science & Technology B 31 (5), 2013
43 2013 Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics TP O’Regan, MV Fischetti, B Sorée, S Jin, W Magnus, M Meuris
Journal of Applied Physics 108 (10), 2010
40 2010 Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
39 2017 Modeling the capacitance-voltage response of In 0.53 Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections TP O’Regan, PK Hurley, B Sorée, MV Fischetti
Applied Physics Letters 96 (21), 2010
35 2010 Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing W Cabrera, B Brennan, H Dong, TP O'Regan, IM Povey, S Monaghan, ...
Applied Physics Letters 104 (1), 2014
32 2014 Electrically active interface defects in the In0. 53Ga0. 47As MOS system V Djara, TP O’Regan, K Cherkaoui, M Schmidt, S Monaghan, É O’Connor, ...
Microelectronic engineering 109, 182-188, 2013
29 2013 Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain L Dong, J Wang, R Namburu, TP O'Regan, M Dubey, AM Dongare
Journal of Applied Physics 117 (24), 2015
25 2015 Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators Y Zhang, MV Fischetti, B Sorée, T O’Regan
Journal of Applied Physics 108 (12), 2010
24 2010 Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN D Ruzmetov, MR Neupane, A Herzing, TP O’Regan, A Mazzoni, ML Chin, ...
2D Materials 5 (4), 045016, 2018
22 2018 Calculation of the capacitance-voltage characteristic of GaAs, In0. 53Ga0. 47As, and InAs metal-oxide-semiconductor structures TP O’Regan, PK Hurley
Applied Physics Letters 99 (16), 2011
21 2011 Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain NA Lanzillo, TP O’Regan, SK Nayak
Computational Materials Science 112, 377-382, 2016
17 2016 
Pankaj B ShahUS Army Research LabCorreu electrònic verificat a mail.mil
