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Ilesanmi Adesida
Ilesanmi Adesida
Nazarbayev University and University of Illinois
Correu electrònic verificat a nu.edu.kz
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Transfer printing by kinetic control of adhesion to an elastomeric stamp
MA Meitl, ZT Zhu, V Kumar, KJ Lee, X Feng, YY Huang, I Adesida, ...
Nature materials 5 (1), 33-38, 2006
19752006
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
WB Lanford, T Tanaka, Y Otoki, I Adesida
Electronics Letters 41 (7), 449-450, 2005
3892005
AlGaN/GaN HEMTs on SiC with fT of over 120 GHz
V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ...
IEEE Electron Device Letters 23 (8), 455-457, 2002
3262002
Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations
C Youtsey, LT Romano, I Adesida
Applied physics letters 73 (6), 797-799, 1998
3221998
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/and low microwave noise
W Lu, J Yang, MA Khan, I Adesida
IEEE Transactions on Electron Devices 48 (3), 581-585, 2001
3082001
Highly anisotropic photoenhanced wet etching of -type GaN
C Youtsey, I Adesida, G Bulman
Applied physics letters 71 (15), 2151-2153, 1997
2971997
Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)
I Adesida, A Mahajan, E Andideh, MA Khan, DT Olsen, JN Kuznia
Applied physics letters 63 (20), 2777-2779, 1993
2821993
Schottky barrier properties of various metals on n-type GaN
AC Schmitz, AT Ping, MA Khan, Q Chen, JW Yang, I Adesida
Semiconductor Science and Technology 11 (10), 1464, 1996
2691996
Metal contacts to n-type GaN
AC Schmitz, AT Ping, MA Khan, Q Chen, JW Yang, I Adesida
Journal of Electronic Materials 27, 255-260, 1998
2651998
Smooth -type GaN surfaces by photoenhanced wet etching
C Youtsey, I Adesida, LT Romano, G Bulman
Applied Physics Letters 72 (5), 560-562, 1998
2211998
High rate etching of SiC using inductively coupled plasma reactive ion etching in -based gas mixtures
FA Khan, I Adesida
Applied physics letters 75 (15), 2268-2270, 1999
2091999
Buckled and wavy ribbons of GaAs for high‐performance electronics on elastomeric substrates
Y Sun, V Kumar, I Adesida, JA Rogers
Advanced Materials 18 (21), 2857-2862, 2006
1972006
A comparative study of surface passivation on AlGaN/GaN HEMTs
W Lu, V Kumar, R Schwindt, E Piner, I Adesida
Solid-State Electronics 46 (9), 1441-1444, 2002
1952002
Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on
V Kumar, L Zhou, D Selvanathan, I Adesida
Journal of applied physics 92 (3), 1712-1714, 2002
1852002
Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching
C Youtsey, LT Romano, RJ Molnar, I Adesida
Applied physics letters 74 (23), 3537-3539, 1999
1761999
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
AT Ping, Q Chen, JW Yang, MA Khan, I Adesida
IEEE Electron Device Letters 19 (2), 54-56, 1998
1741998
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN
AT Ping, Q Chen, JW Yang, MA Khan, I Adesida
Journal of Electronic Materials 27, 261-265, 1998
1561998
Radiolysis and resolution limits of inorganic halide resists
A Muray, M Scheinfein, M Isaacson, I Adesida
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985
1531985
Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer
HK Kim, KK Kim, SJ Park, TY Seong, I Adesida
Journal of applied physics 94 (6), 4225-4227, 2003
1512003
Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕ Al∕ Mo∕ Au Ohmic contacts on n-GaN and AlGaN∕ GaN epilayers
L Wang, FM Mohammed, I Adesida
Journal of applied physics 101 (1), 2007
1462007
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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