Martin Stutzmann

Citada per

	Totes	Des de 2020
Citacions	45803	7486
Índex h	98	34
Índex i10	515	154

2300

1150

575

1725

1986198719881989199019911992199319941995199619971998199920002001200220032004200520062007200820092010201120122013201420152016201720182019202020212022202320242025136 290 217 282 215 449 374 616 524 520 506 538 582 591 812 861 895 1184 1167 1288 1386 1341 1646 1546 1692 1906 2096 2217 2078 2046 2093 2048 1967 1837 1745 1624 1411 1289 1249 167

Accés públic

Mostra-ho tot

100 articles

78 articles

disponibles

no disponibles

Es basa en els requisits de les agències que proporcionen el finançament

Coautors

Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgCorreu electrònic verificat a inatech.uni-freiburg.de
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität MünchenCorreu electrònic verificat a wsi.tum.de
Martin EickhoffInstitut für Festkörperphysik, Universität BremenCorreu electrònic verificat a ifp.uni-bremen.de
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREACorreu electrònic verificat a icn2.cat
Roman DimitrovFinisarCorreu electrònic verificat a finisar.com
Hartmut WiggersUniversity of Duisburg-EssenCorreu electrònic verificat a uni-due.de
James R. ShealyCornell UniversityCorreu electrònic verificat a ece.cornell.edu
Josef Gerhard MüllerMunich University of Applied SciencesCorreu electrònic verificat a hm.edu
WARREN B JACKSONPrincipal ScientistCorreu electrònic verificat a parc.com
Carlos F. O. Graeff FRSC (ORCID:000...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESPCorreu electrònic verificat a unesp.br
Nils WeimannUniversity of Duisburg-EssenCorreu electrònic verificat a uni-due.de
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der WissenschaftenCorreu electrònic verificat a wmi.badw.de
David BiegelsenXerox Palo Alto Research CenterCorreu electrònic verificat a parc.com
Martin AlbrechtLeibniz-Institut für KristallzüchtungCorreu electrònic verificat a ikz-berlin.de
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityCorreu electrònic verificat a cardiff.ac.uk
Manuel CardonaMax Planck InstitutCorreu electrònic verificat a fkf.mpg.de
Felix HoehneWalter-Schottky Institut, TU MünchenCorreu electrònic verificat a wsi.tum.de
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre DameCorreu electrònic verificat a itk.ppke.hu
Gema Martínez CriadoEuropean Synchrotron Radiation FacilityCorreu electrònic verificat a esrf.fr
Jordi ArbiolICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BISTCorreu electrònic verificat a icrea.cat

Segueix

Martin Stutzmann

Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München

Correu electrònic verificat a tum.de - Pàgina d'inici

Semiconductor Physics


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3807	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	2173	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1578	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1436	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1125*	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	812	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	747	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	651	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006	588	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	449	1989
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	426	1997
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999	421	1999
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B—Condensed Matter and Materials Physics 83 (8), 081304, 2011	417	2011
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	389	1996
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	370	2003
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	369	1998
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	369	1987
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	321	1990
Graphene transistor arrays for recording action potentials from electrogenic cells LH Hess, M Jansen, V Maybeck, MV Hauf, M Seifert, M Stutzmann, ... Advanced Materials 23 (43), 5045, 2011	303	2011
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	302	1997

En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.

Articles 1–20

Cites per any

Cites duplicades

Cites combinades

Addició de coautorsCoautors

Segueix

Citada per

Coautors