Sebastian Gutsch

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Margit ZachariasProfessor of Nanotechnology, Albert Ludwigs University FreiburgE-mailová adresa ověřena na: imtek.de
Daniel HillerTU Bergakademie FreibergE-mailová adresa ověřena na: physik.tu-freiberg.de
Julian López-VidrierDoctor in Physics - Group of Optoelectronics and Photonics, Universitat de BarclonaE-mailová adresa ověřena na: el.ub.edu
Andreas HartelIMTEK - Albert Ludwigs Universität FreiburgE-mailová adresa ověřena na: imtek.uni-freiburg.de
Jan LaubeIMTEK/NanotechnologyE-mailová adresa ověřena na: imtek.de
Philipp Löper- pvlab.epfl.ch - École Polytechnique Fédérale de Lausanne (EPFL) - Photovoltaics and Thin FilmE-mailová adresa ověřena na: epfl.ch
Lluís López ConesaUniversity of Barcelona - Scientific and Technological Centers (CCiTUB)E-mailová adresa ověřena na: ub.edu
Christian KübelKarlsruhe Institute of TechnologyE-mailová adresa ověřena na: kit.edu
Manuel SchnabelLawrence Berkeley National LaboratoryE-mailová adresa ověřena na: lbl.gov
Sergey A. DyakovSkolkovo Institute of Science and TechnologyE-mailová adresa ověřena na: tcd.ie
Michael Greben, Ph.D.Charles University, Faculty of Mathematics & Physics Department of Chemical Physics & OpticsE-mailová adresa ověřena na: matfyz.cuni.cz
Jan ValentaCharles UniversityE-mailová adresa ověřena na: mff.cuni.cz
Oriol BlázquezCatalonia Institute for Energy Research (IREC)E-mailová adresa ověřena na: el.ub.edu
Ivan Perez WurflUniversity of New South Wales, SPREEE-mailová adresa ověřena na: unsw.edu.au
Yonder BerencénHelmholtz-Zentrum Dresden-Rossendorf (HZDR), GermanyE-mailová adresa ověřena na: hzdr.de
Binesh Puthen-VeettilMacquarie UniversityE-mailová adresa ověřena na: mq.edu.au
Markus JakobIMTEK/NanotechnologyE-mailová adresa ověřena na: imtek.de
Petr KuzelInstitute of Physics, Czech Academy of SciencesE-mailová adresa ověřena na: fzu.cz
Andrew John BreenThe University of NSWE-mailová adresa ověřena na: unsw.edu.au
Sean Smith, FRACI, Fellow AAASProfessor and Director, National Computational Infrastructure, Australian National UniversityE-mailová adresa ověřena na: anu.edu.au

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Sebastian Gutsch

Hahn-Schickard, Freiburg

E-mailová adresa ověřena na: hahn-schickard.de - Domovská stránka

nanotechnology quantum theory transport material characterization


Název Seřadit podle citací Seřadit podle roku Seřadit podle názvu	Citace Citace	Rok
Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices AM Hartel, D Hiller, S Gutsch, P Löper, S Estradé, F Peiró, B Garrido, ... Thin Solid Films 520 (1), 121-125, 2011	146	2011
Sphericity and roundness computation for particles using the extreme vertices model I Cruz-Matías, D Ayala, D Hiller, S Gutsch, M Zacharias, S Estradé, F Peiró Journal of computational science 30, 28-40, 2019	144	2019
Fundamental temperature-dependent properties of the Si nanocrystal band gap AM Hartel, S Gutsch, D Hiller, M Zacharias Physical Review B—Condensed Matter and Materials Physics 85 (16), 165306, 2012	98	2012
Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography H Gnaser, S Gutsch, M Wahl, R Schiller, M Kopnarski, D Hiller, ... Journal of Applied Physics 115 (3), 2014	80	2014
Charge transport in Si nanocrystal/SiO2 superlattices S Gutsch, J Laube, AM Hartel, D Hiller, N Zakharov, P Werner, ... Journal of Applied Physics 113 (13), 2013	80	2013
Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO₂ System D König, S Gutsch, H Gnaser, M Wahl, M Kopnarski, J Göttlicher, ... Scientific reports 5 (1), 9702, 2015	77	2015
Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals D Hiller, A Zelenina, S Gutsch, SA Dyakov, L López-Conesa, ... Journal of Applied Physics 115 (20), 2014	61	2014
Intrinsic nonradiative recombination in ensembles of silicon nanocrystals AM Hartel, S Gutsch, D Hiller, M Zacharias Physical Review B—Condensed Matter and Materials Physics 87 (3), 035428, 2013	56	2013
Modulation doping of silicon using aluminium-induced acceptor states in silicon dioxide D König, D Hiller, S Gutsch, M Zacharias, S Smith Scientific reports 7 (1), 46703, 2017	53	2017
Defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size D Hiller, J López-Vidrier, S Gutsch, M Zacharias, K Nomoto, D König Scientific Reports 7 (1), 863, 2017	50	2017
Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing J Laube, D Nübling, H Beh, S Gutsch, D Hiller, M Zacharias Thin Solid Films 603, 377-381, 2016	50	2016
Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering S Hernández, J López-Vidrier, L López-Conesa, D Hiller, S Gutsch, ... Journal of Applied Physics 115 (20), 2014	50	2014
Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix S Gutsch, AM Hartel, D Hiller, N Zakharov, P Werner, M Zacharias Applied Physics Letters 100 (23), 2012	49	2012
Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift A Zelenina, SA Dyakov, D Hiller, S Gutsch, V Trouillet, M Bruns, ... Journal of Applied Physics 114 (18), 2013	48	2013
Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals J Valenta, M Greben, S Gutsch, D Hiller, M Zacharias Applied Physics Letters 105 (24), 2014	46	2014
Energy offset between silicon quantum structures: interface impact of embedding dielectrics as doping alternative D König, D Hiller, S Gutsch, M Zacharias Advanced Materials Interfaces 1 (9), 1400359, 2014	43	2014
Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2 S Gutsch, J Laube, D Hiller, W Bock, M Wahl, M Kopnarski, H Gnaser, ... Applied Physics Letters 106 (11), 2015	42	2015
Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices J López-Vidrier, Y Berencén, S Hernández, O Blázquez, S Gutsch, ... Journal of Applied Physics 114 (16), 2013	41	2013
Boron-Incorporating Silicon Nanocrystals Embedded in SiO₂: Absence of Free Carriers vs. B-Induced Defects D Hiller, J López-Vidrier, S Gutsch, M Zacharias, M Wahl, W Bock, ... Scientific Reports 7 (1), 8337, 2017	39	2017
Two-dimensional percolation threshold in confined Si nanoparticle networks J Laube, S Gutsch, D Wang, C Kübel, M Zacharias, D Hiller Applied Physics Letters 108 (4), 2016	39	2016

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