| A review of III–V nanowire infrared photodetectors and sensors RR LaPierre, M Robson, KM Azizur-Rahman, P Kuyanov Journal of Physics D: Applied Physics 50 (12), 123001, 2017 | 253 | 2017 |
| Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx-Si(111) substrates MT Robson, VG Dubrovskii, RR LaPierre Nanotechnology 26, 2015 | 32 | 2015 |
| Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon M Robson, KM Azizur-Rahman, D Parent, P Wojdylo, DA Thompson, ... Nano Futures 1 (3), 035001, 2017 | 21 | 2017 |
| InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy MT Robson, RR LaPierre Journal of Crystal Growth 436, 1-11, 2016 | 15 | 2016 |
| Modeling selective-area growth of InAsSb nanowires AS Sokolovskii, MT Robson, RR LaPierre, VG Dubrovskii Nanotechnology 30 (28), 285601, 2019 | 10 | 2019 |
| Polarization-selective excitation of plasmonic resonances in silver nanocube random arrays by optical fiber cladding mode evanescent fields A Ianoul, M Robson, V Pripotnev, J Albert RSC Advances 4 (38), 19725-19730, 2014 | 4 | 2014 |
| Antimonide nanowires for multispectral infrared photodetection M Robson | 1 | 2018 |
| Integrated III-V/Si Visible and IR Nanowire Photodetectors A Shetty, E Barrera, F Sfigakis, M Robson, N Isik, C Goosney, R Lapierre, ... APS March Meeting Abstracts 2019, S11. 012, 2019 | | 2019 |
