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Alexander Azarov
Alexander Azarov
Department of Physics, SMN, University of Oslo, Norway
E-mailová adresa ověřena na: smn.uio.no
Název
Citace
Citace
Rok
Oxygen vacancies: The origin of -type conductivity in ZnO
L Liu, Z Mei, A Tang, A Azarov, A Kuznetsov, QK Xue, X Du
Physical Review B 93 (23), 235305, 2016
3262016
Probing Defects in Nitrogen-Doped Cu2O
J Li, Z Mei, L Liu, H Liang, A Azarov, A Kuznetsov, Y Liu, A Ji, Q Meng, ...
Scientific reports 4, 7240, 2014
1392014
Understanding phase separation in ZnCdO by a combination of structural and optical analysis
V Venkatachalapathy, A Galeckas, M Trunk, T Zhang, A Azarov, ...
Physical Review B—Condensed Matter and Materials Physics 83 (12), 125315, 2011
672011
Disorder-induced ordering in gallium oxide polymorphs
A Azarov, C Bazioti, V Venkatachalapathy, P Vajeeston, E Monakhov, ...
Physical Review Letters 128 (1), 015704, 2022
652022
Cubic silicon carbide as a potential photovoltaic material
M Syväjärvi, Q Ma, V Jokubavicius, A Galeckas, J Sun, X Liu, M Jansson, ...
Solar Energy Materials and Solar Cells 145, 104-108, 2016
652016
Analytical methods and instruments for micro-and nanomaterials
HH Radamson, A Hallén, I Sychugov, A Azarov
Springer, 2023
592023
Effect of implanted species on thermal evolution of ion-induced defects in ZnO
AY Azarov, A Hallén, XL Du, P Rauwel, AY Kuznetsov, BG Svensson
Journal of Applied Physics 115 (7), 2014
562014
Energy spike effects in ion-bombarded GaN
SO Kucheyev, AY Azarov, AI Titov, PA Karaseov, TM Kuchumova
Journal of Physics D: Applied Physics 42 (8), 085309, 2009
542009
Effect of the density of collision cascades on ion implantation damage in ZnO
AY Azarov, SO Kucheyev, AI Titov, PA Karaseov
Journal of Applied Physics 102 (8), 2007
542007
Universal radiation tolerant semiconductor
A Azarov, JG Fernández, J Zhao, F Djurabekova, H He, R He, Ø Prytz, ...
Nature Communications 14 (1), 4855, 2023
532023
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions
AI Titov, SO Kucheyev, VS Belyakov, AY Azarov
Journal of Applied Physics 90 (8), 3867-3872, 2001
452001
Mechanism for the molecular effect in Si bombarded with clusters of light atoms
AI Titov, AY Azarov, LM Nikulina, SO Kucheyev
Physical Review B—Condensed Matter and Materials Physics 73 (6), 064111, 2006
442006
Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs
AI Titov, KV Karabeshkin, AI Struchkov, VI Nikolaev, A Azarov, DS Gogova, ...
Vacuum 200, 111005, 2022
402022
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory
AI Titov, VS Belyakov, AY Azarov
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003
402003
Optical activity and defect/dopant evolution in ZnO implanted with Er
A Azarov, A Galeckas, A Hallén, A Kuznetsov, E Monakhov, BG Svensson
Journal of Applied Physics 118 (12), 2015
372015
Comparison of low-and room-temperature damage formation in Ar ion implanted GaN and ZnO
E Wendler, W Wesch, AY Azarov, N Catarino, A Redondo-Cubero, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013
372013
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
SB Kjeldby, A Azarov, PD Nguyen, V Venkatachalapathy, R Mikšová, ...
Journal of Applied Physics 131 (12), 2022
302022
Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements
A Azarov, V Venkatachalapathy, EV Monakhov, AY Kuznetsov
Applied Physics Letters 118 (23), 2021
302021
Crucial role of implanted atoms on dynamic defect annealing in ZnO
AY Azarov, E Wendler, AY Kuznetsov, BG Svensson
Applied Physics Letters 104 (5), 2014
302014
Model for radiation damage buildup in GaN
AI Titov, PA Karaseov, AY Kataev, AY Azarov, SO Kucheyev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012
30*2012
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–20