| Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 1010) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation … W Banerjee, SH Kim, S Lee, S Lee, D Lee, H Hwang Advanced Functional Materials 31 (37), 2104054, 2021 | 51 | 2021 |
| An efficient approach based on tuned nanoionics to maximize memory characteristics in Ag‐based devices W Banerjee, SH Kim, S Lee, D Lee, H Hwang Advanced Electronic Materials 7 (4), 2100022, 2021 | 37 | 2021 |
| Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer S Lee, W Banerjee, S Lee, C Sung, H Hwang Advanced Electronic Materials 7 (2), 2000869, 2021 | 26 | 2021 |
| Highly-stable (< 3% fluctuation) Ag-based threshold switch with extreme-low OFF current of 0.1 pA, extreme-high selectivity of 10 9 and high endurance of 10 9 cycles W Banerjee, IV Karpov, A Agrawal, S Kim, S Lee, S Lee, D Lee, H Hwang 2020 IEEE International Electron Devices Meeting (IEDM), 28.4. 1-28.4. 4, 2020 | 23 | 2020 |
| Hardware neural network using hybrid synapses via transfer learning: WOx nano-resistors and TiOx RRAM synapse for energy-efficient edge-AI sensor W Choi, M Kwak, S Heo, K Lee, S Lee, H Hwang 2021 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2021 | 13 | 2021 |
| High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET S Heo, J Lee, S Lee, S Lee, C Lee, RH Baek, H Hwang 2021 IEEE International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2021 | 10 | 2021 |
| Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications S Lee, SH Kim, S Oh, D Lee, H Hwang Advanced Electronic Materials 8 (5), 2101257, 2022 | 4 | 2022 |
| Improved turn-off speed and uniformity of atomic threshold switch device by AgSe electrode and bipolar pulse forming S Oh, S Lee, H Hwang IEEE Journal of the Electron Devices Society 9, 864-867, 2021 | 4 | 2021 |
| Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0. 5Zr0. 5O2/TiN device H Kim, A Kashir, H Jang, S Oh, M Yadav, S Lee, H Hwang Nano Express 3 (1), 015004, 2022 | 3 | 2022 |
| Strategies for ultra-fast bit generation of two-terminal threshold switch-based true random number generator using drift-free Ge-doped SiO2 threshold switch device S Lee Solid-State Electronics 201, 108609, 2023 | 2 | 2023 |
| Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy S Lee, S Lee, H Hwang AIP Advances 13 (2), 2023 | | 2023 |
