Qimin Yan

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Spoluautoři

Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraE-mailová adresa ověřena na: mrl.ucsb.edu
Jeffrey B. NeatonUniversity of California, Berkeley & Lawrence Berkeley National LaboratoryE-mailová adresa ověřena na: berkeley.edu
Jinbo PanAssociate Professor, Institute of Physics, Chinese Academy of SciencesE-mailová adresa ověřena na: iphy.ac.cn
Wenhui DuanTsinghua University, Beijing, ChinaE-mailová adresa ověřena na: tsinghua.edu.cn
Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-GesellschaftE-mailová adresa ověřena na: fhi-berlin.mpg.de
John M. GregoireCaltechE-mailová adresa ověřena na: caltech.edu
Anderson JanottiUniversity of DelawareE-mailová adresa ověřena na: udel.edu
Emmanouil KioupakisProfessor and Karl F. and Patricia J. Betz Family Scholar, University of MichiganE-mailová adresa ověřena na: umich.edu
Bing HuangProfessor, Beijing Computational Science Research Center & Beijing Normal UniversityE-mailová adresa ověřena na: csrc.ac.cn
Kristin Aslaug Persson (nee Einarsdott...Department of Materials Science and Engineering, UC BerkeleyE-mailová adresa ověřena na: berkeley.edu
Jim SpeckProfessor of Materials, UCSBE-mailová adresa ověřena na: ucsb.edu
Liping YuAssociate Professor, University of Central FloridaE-mailová adresa ověřena na: ucf.edu
Dr. Shenqiang RenUniversity of Maryland College ParkE-mailová adresa ověřena na: umd.edu
John P. PerdewTemple UniversityE-mailová adresa ověřena na: temple.edu
Arun BansilUniversity Distinguished Professor, Physics Department, Northeastern UniversityE-mailová adresa ověřena na: northeastern.edu
Yugang SunDepartment of Chemistry, Temple UniversityE-mailová adresa ověřena na: temple.edu
John L LyonsCenter for Computational Materials Science, US Naval Research LaboratoryE-mailová adresa ověřena na: nrl.navy.mil
Deep JariwalaUniversity of Pennsylvania, Caltech, Northwestern University, Rice UniversityE-mailová adresa ověřena na: seas.upenn.edu
Haibin LingSUNY Empire Innovation Professor, Stony Brook UniversityE-mailová adresa ověřena na: cs.stonybrook.edu
Xiaofeng QianAssociate Professor, Department of Materials Science and Engineering, Texas A&M UniversityE-mailová adresa ověřena na: tamu.edu

Sledovat

Qimin Yan

Associate Professor, Department of Physics, Northeastern University

E-mailová adresa ověřena na: northeastern.edu - Domovská stránka

Computational physics data-driven materials design energy & quantum materials


Název Seřadit podle citací Seřadit podle roku Seřadit podle názvu	Citace Citace	Rok
Intrinsic current− voltage characteristics of graphene nanoribbon transistors and effect of edge doping Q Yan, B Huang, J Yu, F Zheng, J Zang, J Wu, BL Gu, F Liu, W Duan Nano letters 7 (6), 1469-1473, 2007	705	2007
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ... Nano letters 14 (9), 5097, 2014	699	2014
First-principles theory of nonradiative carrier capture via multiphonon emission A Alkauskas, Q Yan, CG Van de Walle Physical Review B 90 (7), 075202, 2014	387	2014
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN PG Moses, M Miao, Q Yan, CG Van de Walle The Journal of chemical physics 134 (8), 2011	361	2011
Learning atoms for materials discovery Q Zhou, P Tang, S Liu, J Pan, Q Yan, SC Zhang Proceedings of the National Academy of Sciences 115 (28), E6411-E6417, 2018	232	2018
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ... Applied Physics Letters 100 (20), 2012	221	2012
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes E Kioupakis, Q Yan, CG Van de Walle Applied Physics Letters 101 (23), 2012	215	2012
Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment Q Yan, J Yu, SK Suram, L Zhou, A Shinde, PF Newhouse, W Chen, G Li, ... Proceedings of the National Academy of Sciences 114 (12), 3040-3043, 2017	214	2017
Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN Q Yan, P Rinke, M Scheffler, CG Van de Walle Applied Physics Letters 95 (12), 2009	205	2009
Origins of optical absorption and emission lines in AlN Q Yan, A Janotti, M Scheffler, CG Van de Walle Applied Physics Letters 105 (11), 2014	197	2014
Making a field effect transistor on a single graphene nanoribbon by selective doping B Huang, Q Yan, G Zhou, J Wu, BL Gu, W Duan, F Liu Applied Physics Letters 91 (25), 2007	196	2007
Polarization-Driven Topological Insulator Transition in a Quantum Well MS Miao, Q Yan, CG Van de Walle, WK Lou, LL Li, K Chang Physical review letters 109 (18), 186803, 2012	185	2012
Negative Poisson’s ratio in 1T-type crystalline two-dimensional transition metal dichalcogenides L Yu, Q Yan, A Ruzsinszky Nature Communications 8, 15224, 2017	174	2017
Role of nitrogen vacancies in the luminescence of Mg-doped GaN Q Yan, A Janotti, M Scheffler, CG Van de Walle Applied Physics Letters 100 (14), 2012	170	2012
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices E Kioupakis, Q Yan, D Steiauf, CG Van de Walle New Journal of Physics 15 (12), 125006, 2013	160	2013
Effects of strain on the band structure of group-III nitrides Q Yan, P Rinke, A Janotti, M Scheffler, CG Van de Walle Physical Review B 90 (12), 125118, 2014	159	2014
Microscopic origin of the -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying N Wang, D West, J Liu, J Li, Q Yan, BL Gu, SB Zhang, W Duan Physical review B 89 (4), 045142, 2014	126	2014
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ... Applied physics letters 99 (5), 2011	108	2011
High Throughput Discovery of Solar Fuels Photoanodes in the CuO–V₂O₅ System L Zhou, Q Yan, A Shinde, D Guevarra, PF Newhouse, ... Advanced Energy Materials 5 (22), 1500968, 2015	106	2015
Band parameters and strain effects in ZnO and group-III nitrides Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ... Semiconductor science and technology 26 (1), 014037, 2010	105	2010

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