Články se zplnomocněním k veřejnému přístupu - Zhongming ZengDalší informace
Nedostupné nikde: 93
Flexible all‐solid‐state supercapacitors based on liquid‐exfoliated black‐phosphorus nanoflakes
C Hao, B Yang, F Wen, J Xiang, L Li, W Wang, Z Zeng, B Xu, Z Zhao, Z Liu, ...
Advanced Materials 28 (16), 3194-3201, 2016
Zplnomocnění: National Natural Science Foundation of China
Liquid‐exfoliated black phosphorous nanosheet thin films for flexible resistive random access memory applications
C Hao, F Wen, J Xiang, S Yuan, B Yang, L Li, W Wang, Z Zeng, L Wang, ...
Advanced Functional Materials 26 (12), 2016-2024, 2016
Zplnomocnění: National Natural Science Foundation of China
Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction
P Qin, H Yan, X Wang, H Chen, Z Meng, J Dong, M Zhu, J Cai, Z Feng, ...
Nature 613 (7944), 485-489, 2023
Zplnomocnění: Chinese Academy of Sciences, National Natural Science Foundation of China
Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
T Li, G Du, B Zhang, Z Zeng
Applied Physics Letters 105 (9), 2014
Zplnomocnění: Chinese Academy of Sciences, National Natural Science Foundation of China
Sulfur-doped black phosphorus field-effect transistors with enhanced stability
W Lv, B Yang, B Wang, W Wan, Y Ge, R Yang, C Hao, J Xiang, B Zhang, ...
ACS Applied Materials & Interfaces 10 (11), 9663-9668, 2018
Zplnomocnění: National Natural Science Foundation of China
Voltage-controlled spintronic stochastic neuron based on a magnetic tunnel junction
J Cai, B Fang, L Zhang, W Lv, B Zhang, T Zhou, G Finocchio, Z Zeng
Physical Review Applied 11 (3), 034015, 2019
Zplnomocnění: National Natural Science Foundation of China, Government of Italy
Ultrahigh-photoresponsive UV photodetector based on a BP/ReS 2 heterostructure p–n diode
S Cao, Y Xing, J Han, X Luo, W Lv, W Lv, B Zhang, Z Zeng
Nanoscale 10 (35), 16805-16811, 2018
Zplnomocnění: National Natural Science Foundation of China
Degradation of black phosphorus: a real-time 31P NMR study
Y Wang, B Yang, B Wan, X Xi, Z Zeng, E Liu, G Wu, Z Liu, W Wang
2D Materials 3 (3), 035025, 2016
Zplnomocnění: National Natural Science Foundation of China
Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode
L Zhang, B Fang, J Cai, M Carpentieri, V Puliafito, F Garescì, PK Amiri, ...
Applied Physics Letters 113 (10), 2018
Zplnomocnění: National Natural Science Foundation of China, Government of Italy
Multilevel storage device based on domain-wall motion in a magnetic tunnel junction
J Cai, B Fang, C Wang, Z Zeng
Applied Physics Letters 111 (18), 2017
Zplnomocnění: National Natural Science Foundation of China, Government of Italy
Magnetic transport property of NiFe/WSe2/NiFe spin valve structure
K Zhao, Y Xing, J Han, J Feng, W Shi, B Zhang, Z Zeng
Journal of Magnetism and Magnetic Materials 432, 10-13, 2017
Zplnomocnění: National Natural Science Foundation of China
Sparse neuromorphic computing based on spin-torque diodes
J Cai, L Zhang, B Fang, W Lv, B Zhang, G Finocchio, R Xiong, S Liang, ...
Applied Physics Letters 114 (19), 2019
Zplnomocnění: National Natural Science Foundation of China, Government of Italy
Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect
T Lei, H Tu, W Lv, H Ma, J Wang, R Hu, Q Wang, L Zhang, B Fang, Z Liu, ...
ACS Applied Materials & Interfaces 13 (42), 50213-50219, 2021
Zplnomocnění: National Natural Science Foundation of China
Large anisotropic thermal transport properties observed in bulk single crystal black phosphorus
Y Wang, G Xu, Z Hou, B Yang, X Zhang, E Liu, X Xi, Z Liu, Z Zeng, ...
Applied Physics Letters 108 (9), 2016
Zplnomocnění: National Natural Science Foundation of China
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
Y Ma, X Zhou, W Tang, X Zhang, G Xu, L Zhang, T Chen, S Dai, C Bian, ...
IEEE Electron Device Letters 44 (3), 384-387, 2023
Zplnomocnění: Chinese Academy of Sciences, National Natural Science Foundation of China
Reduction of MOS interfacial states between β-Ga2O3 and Al2O3 insulator by self-reaction etching with Ga flux
B Feng, T He, G He, X Zhang, Y Wu, X Chen, Z Li, X Zhang, Z Jia, G Niu, ...
Applied Physics Letters 118 (18), 2021
Zplnomocnění: National Natural Science Foundation of China
Electric field-tunable giant magnetoresistance (GMR) sensor with enhanced linear range
L Wang, Z Hu, Y Zhu, D Xian, J Cai, M Guan, C Wang, J Duan, J Wu, ...
ACS applied materials & interfaces 12 (7), 8855-8861, 2020
Zplnomocnění: National Natural Science Foundation of China
The current modulation of anomalous Hall effect in van der Waals Fe3GeTe2/WTe2 heterostructures
Y Shao, W Lv, J Guo, B Qi, W Lv, S Li, G Guo, Z Zeng
Applied Physics Letters 116 (9), 2020
Zplnomocnění: National Natural Science Foundation of China
Enhancement of torque efficiency and spin Hall angle driven collaboratively by orbital torque and spin–orbit torque
ZY Xiao, YJ Li, W Zhang, YJ Han, D Li, Q Chen, ZM Zeng, ZY Quan, ...
Applied Physics Letters 121 (7), 2022
Zplnomocnění: National Natural Science Foundation of China
Engineering of forming-free resistive switching characteristics in ZrO2 films
G Du, T Li, C Wang, B Fang, B Zhang, Z Zeng
Journal of Physics D: Applied Physics 48 (22), 225301, 2015
Zplnomocnění: Chinese Academy of Sciences, National Natural Science Foundation of China
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