| Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs H Ghanatian, SE Hosseini Journal of Computational Electronics 15, 508-515, 2016 | 26 | 2016 |
| Spin-orbit-torque-based devices, circuits and architectures F Moradi, H Farkhani, B Zeinali, H Ghanatian, JMA Pelloux-Prayer, ... arXiv preprint arXiv:1912.01347, 2019 | 15 | 2019 |
| Memory and communication-in-logic using vortex and precessional oscillations in a magnetic tunnel junction S Shreya, M Zamani, Y Rezaeiyan, H Ghanatian, T Böhnert, AS Jenkins, ... IEEE Magnetics Letters 13, 1-5, 2022 | 8 | 2022 |
| STDP implementation using multi-state spin− orbit torque synapse H Ghanatian, M Ronchini, H Farkhani, F Moradi Semiconductor Science and Technology 37 (2), 024004, 2021 | 7 | 2021 |
| Nanoscale Ultra Thin Body-Silicon-On-Insulator field effect transistor with step BOX: Self-heating and short channel effects H GHanatian, M Fathipour, H Talebi 2009 10th International Conference on Ultimate Integration of Silicon, 325-328, 2009 | 6 | 2009 |
| A 3-bit flash spin-orbit torque (SOT)-analog-to-digital converter (ADC) H Ghanatian, H Farkhani, Y Rezaeiyan, T Böhnert, R Ferreira, F Moradi IEEE Transactions on Electron Devices 69 (4), 1691-1697, 2022 | 5 | 2022 |
| Improvement of short channel effects in cylindrical strained silicon nanowire transistor F Karimi, M Fathipour, H Ghanatian, V Fathipour Eng. Technol 70, 467-470, 2010 | 5 | 2010 |
| Quasi-Schottky-barrier UTBB SOI MOSFET for low-power robust SRAMs H Ghanatian, SE Hosseini, B Zeinali, F Moradi IEEE Transactions on Electron Devices 64 (4), 1575-1582, 2017 | 4 | 2017 |
| A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors F Karimi, M Fathipour, H Ghanatian, V Fathipour World Academy of Science, Engineering and Technology International Journal …, 2010 | 4 | 2010 |
| Spin–orbit torque flash analog-to-digital converter H Ghanatian, L Benetti, P Anacleto, T Böhnert, H Farkhani, R Ferreira, ... Scientific Reports 13 (1), 9416, 2023 | 2 | 2023 |
| Analytical modelling for the frequency behavior of two distinct modes in nano-constriction spin Hall nano-oscillator H Ghanatian, M Rajabali, R Khymyn, A Kumar, VH González, H Farkhani, ... arXiv preprint arXiv:2412.09277, 2024 | | 2024 |
| A Hybrid Spin-CMOS Flash ADC based on Spin Hall Effect and Spin Transfer Torque H Ghanatian, H Farkhani, F Moradi 2022 IEEE 40th International Conference on Computer Design (ICCD), 701-704, 2022 | | 2022 |
| Memory and Communication Logic (MCL) in Magnetic Tunnel Junctions A Tofte, S Shreya, HG Najafabadi, T Böhnert, R Ferreira, H Farkhani, ... Trends in MAGnetism-PetaSpin Conference, 2022 | | 2022 |
| Analytical modeling of potential distribution in trigate SOI MOSFETs H Ghanatian, SE Hosseini 2015 23rd Iranian Conference on Electrical Engineering, 1240-1244, 2015 | | 2015 |
| Novel techniques for off-state current components reduction in double gate source-heterojunction-MOS-transistor M Tahermaram, M Vadizadeh, H Ghanatian, M Fathipour 2009 1st Asia Symposium on Quality Electronic Design, 242-245, 2009 | | 2009 |
| Placement and configuration of nanowires CMOL technology H Heidari, S Mirzakuchaki, H Ghanatian Amvaj-e-Bartar Magazine 30, 33-41, 2007 | | 2007 |
Morteza FathipourUniversity of TehranE-mailová adresa ověřena na: ut.ac.ir