Tony Schenk

Citace

	Všechny	Od 2020
Citace	9021	6704
h-index	37	36
i10-index	58	56

1500

750

375

1125

20142015201620172018201920202021202220232024202536 109 187 404 727 841 1052 1298 1453 1280 1343 276

Veřejný přístup

Zobrazit všechny

38 článků

12 článků

dostupné

nedostupné

Vychází ze zplnomocnění pro financování

Spoluautoři

Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenE-mailová adresa ověřena na: namlab.com
Min Hyuk ParkSeoul National UniversityE-mailová adresa ověřena na: snu.ac.kr
Milan PesicApplied Materials Inc | MDLab/MDLSoft | Namlab | TU DresdenE-mailová adresa ověřena na: amat.com
James LeBeauAssociate Professor, Massachusetts Institute of TechnologyE-mailová adresa ověřena na: mit.edu
Stefan SlesazeckNaMLab gGmbHE-mailová adresa ověřena na: namlab.com
Franz P. G. FenglerNaMLab gGmbHE-mailová adresa ověřena na: namlab.com
Christoph AdelmannImecE-mailová adresa ověřena na: imec.be
Jacob L. JonesMaterials Science & Engineering, North Carolina State UniversityE-mailová adresa ověřena na: ncsu.edu
Darius PohlDCN - TU DresdenE-mailová adresa ověřena na: tu-dresden.de
Robin MaterlikHochschule MünchenE-mailová adresa ověřena na: hm.edu
Chris M. FancherMaterial Science and Technology Division, Oak Ridge National LabE-mailová adresa ověřena na: ornl.gov
Dr. Stefan MuellerCTO at Ferroelectric Memory Company (FMC)E-mailová adresa ověřena na: ferroelectric-memory.com
Sergej StarschichIWE 2, RWTH Aachen UniversityE-mailová adresa ověřena na: iwe.rwth-aachen.de
Dominik MartinFerdinand-Braun-InstitutE-mailová adresa ověřena na: alumni.tu-berlin.de
Sergei V. KalininWeston Fulton Chair Professor, UT Knoxville. Chief Scientist, AI/ML for Physical Sciences, PNNLE-mailová adresa ověřena na: utk.edu
Chuanzhen ZhouAnalytical Instrumentation Facility at NC State UniversityE-mailová adresa ověřena na: ncsu.edu
Alexei GruvermanCharles Mach University Professor of Physics, University of NebraskaE-mailová adresa ověřena na: unl.edu
Johannes OckerNaMLabE-mailová adresa ověřena na: namlab.com
Christopher KuennethAssistant Professor, University of BayreuthE-mailová adresa ověřena na: uni-bayreuth.de
Sebastjan GlinšekLuxembourg Institute of Science and TechnologyE-mailová adresa ověřena na: list.lu

Sledovat

Tony Schenk

Member of Technical Staff & Lead of Cell Development at Ferroelectric Memory Company

E-mailová adresa ověřena na: ferroelectric-memory.com - Domovská stránka

ferroelectrics HfO2 structural characterization electrical characterization


Název Seřadit podle citací Seřadit podle roku Seřadit podle názvu	Citace Citace	Rok
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016	844	2016
On the structural origins of ferroelectricity in HfO2 thin films X Sang, ED Grimley, T Schenk, U Schroeder, JM LeBeau Applied Physics Letters 106 (16), 2015	646	2015
Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 072006, 2015	594	2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013	518	2013
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO₂ Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016	419	2016
Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014	417	2014
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films D Zhou, J Xu, Q Li, Y Guan, F Cao, X Dong, J Müller, T Schenk, ... Applied Physics Letters 103 (19), 2013	403	2013
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017	374	2017
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ... Inorganic chemistry 57 (5), 2752-2765, 2018	343	2018
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ... Journal of Materials Chemistry C 5 (19), 4677-4690, 2017	325	2017
Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pešić, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015	267	2015
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ... Applied Physics Letters 104 (9), 2014	240	2014
About the deformation of ferroelectric hystereses T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ... Applied Physics Reviews 1 (4), 041103, 2014	221	2014
Electric field cycling behavior of ferroelectric hafnium oxide T Schenk, U Schroeder, M Pešić, M Popovici, YV Pershin, T Mikolajick ACS applied materials & interfaces 6 (22), 19744-19751, 2014	199	2014
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films S Starschich, T Schenk, U Schroeder, U Boettger Applied Physics Letters 110 (18), 2017	196	2017
Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ... Advanced Materials 26 (48), 8198-8202, 2014	189	2014
Si doped hafnium oxide—A “fragile” ferroelectric system C Richter, T Schenk, MH Park, FA Tscharntke, ED Grimley, JM LeBeau, ... Advanced Electronic Materials 3 (10), 1700131, 2017	186	2017
Ferroelectricity in doped hafnium oxide: materials, properties and devices U Schroeder, CS Hwang, H Funakubo Woodhead Publishing, 2019	175	2019
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂ ED Grimley, T Schenk, T Mikolajick, U Schroeder, JM LeBeau Advanced Materials Interfaces 5 (5), 1701258, 2018	160	2018
Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015	160	2015

Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.

Články 1–20

Citace za rok

Duplicitní citace

Sloučené citace

Přidat spoluautorySpoluautoři

Sledovat

Citace

Spoluautoři