| Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide S Starschich, S Menzel, U Böttger Applied Physics Letters 108 (3), 2016 | 292 | 2016 |
| An extensive study of the influence of dopants on the ferroelectric properties of HfO 2 S Starschich, U Boettger Journal of Materials Chemistry C 5 (2), 333-338, 2017 | 244 | 2017 |
| Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors M Hoffmann, U Schroeder, C Künneth, A Kersch, S Starschich, U Böttger, ... Nano Energy 18, 154-164, 2015 | 238 | 2015 |
| About the deformation of ferroelectric hystereses T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ... Applied physics reviews 1 (4), 2014 | 222 | 2014 |
| Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films S Starschich, T Schenk, U Schroeder, U Boettger Applied Physics Letters 110 (18), 2017 | 196 | 2017 |
| Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes S Starschich, D Griesche, T Schneller, R Waser, U Böttger Applied physics letters 104 (20), 2014 | 168 | 2014 |
| Domain pinning: Comparison of hafnia and PZT based ferroelectrics FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ... Advanced Electronic Materials 3 (4), 1600505, 2017 | 136 | 2017 |
| Chemical solution deposition of ferroelectric hafnium oxide for future lead free ferroelectric devices S Starschich, D Griesche, T Schneller, U Böttger ECS Journal of Solid State Science and Technology 4 (12), P419, 2015 | 91 | 2015 |
| Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2 S Starschich, S Menzel, U Böttger Journal of Applied Physics 121 (15), 2017 | 77 | 2017 |
| Doped ZrO2 for future lead free piezoelectric devices S Starschich, U Böttger Journal of Applied Physics 123 (4), 2018 | 41 | 2018 |
| Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications FPG Fengler, M Pešić, S Starschich, T Schneller, U Böttger, T Schenk, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 369-372, 2016 | 37 | 2016 |
| Dependence of the SET switching variability on the initial state in HfOx‐based ReRAM C La Torre, K Fleck, S Starschich, E Linn, R Waser, S Menzel physica status solidi (a) 213 (2), 316-319, 2016 | 37 | 2016 |
| Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell S Nordmann, B Berghoff, A Hessel, B Zielinsk, J John, S Starschich, ... Solar Energy Materials and Solar Cells 191, 422-426, 2019 | 22 | 2019 |
| Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2 B Xu, PD Lomenzo, A Kersch, T Schenk, C Richter, CM Fancher, ... Advanced Functional Materials 34 (8), 2311825, 2024 | 16 | 2024 |
| A monolithic all-silicon multi-junction solar device for direct water splitting S Nordmann, B Berghoff, A Hessel, N Wilck, B Osullivan, M Debucquoy, ... Renewable Energy 94, 90-95, 2016 | 7 | 2016 |
| Effect of surface/interface energy and stress on the ferroelectric properties MH Park, T Schenk, S Starschich, CM Fancher, HJ Kim, U Böttger, ... Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019 | 5 | 2019 |
| Dopants in chemical solution-deposited HfO2 films U Böttger, S Starschich, D Griesche, T Schneller Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019 | 4 | 2019 |
| Ferroelectric, Pyroelectric and Piezoelectric Effects of Hafnia and Zirconia Based Thin Films S Starschich Dissertation, RWTH Aachen University, 2017, 2017 | 4 | 2017 |
| Applied Physics Reviews T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger Applied Physics Reviews 1, 041103, 2014 | 2 | 2014 |
| Understanding of Trap-Assisted Tunneling Current-Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application MS Kim, B Kaczer, S Starschich, M Popovici, J Swerts, O Richard, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 1 | 2012 |
Tony SchenkMember of Technical Staff & Lead of Cell Development at Ferroelectric Memory CompanyE-mailová adresa ověřena na: ferroelectric-memory.com
