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Friedrich Schäffler
Friedrich Schäffler
Johannes Kepler University Linz (JKU), Austria
E-mailová adresa ověřena na: jku.at
Název
Citace
Citace
Rok
High-mobility Si and Ge structures
F Schäffler
Semiconductor Science and Technology 12 (12), 1515, 1997
10481997
Fatty acid salts as stabilizers in size-and shape-controlled nanocrystal synthesis: the case of inverse spinel iron oxide
MV Kovalenko, MI Bodnarchuk, RT Lechner, G Hesser, F Schäffler, ...
Journal of the American Chemical Society 129 (20), 6352-6353, 2007
4892007
Stabilization of the nanomorphology of polymer–fullerene “bulk heterojunction” blends using a novel polymerizable fullerene derivative
M Drees, H Hoppe, C Winder, H Neugebauer, NS Sariciftci, W Schwinger, ...
Journal of Materials Chemistry 15 (48), 5158-5163, 2005
2672005
A germanium hole spin qubit
H Watzinger, J Kukučka, L Vukušić, F Gao, T Wang, F Schäffler, JJ Zhang, ...
Nature communications 9 (1), 3902, 2018
2582018
Colloidal HgTe nanocrystals with widely tunable narrow band gap energies: from telecommunications to molecular vibrations
MV Kovalenko, E Kaufmann, D Pachinger, J Roither, M Huber, J Stangl, ...
Journal of the American Chemical Society 128 (11), 3516-3517, 2006
2472006
Efficiency limiting morphological factors of MDMO-PPV: PCBM plastic solar cells
H Hoppe, T Glatzel, M Niggemann, W Schwinger, F Schaeffler, A Hinsch, ...
Thin solid films 511, 587-592, 2006
2182006
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
F Schäffler, D Többen, HJ Herzog, G Abstreiter, B Holländer
Semiconductor science and technology 7 (2), 260-266, 1992
1941992
HIGH-ELECTRON-MOBILITY SI/SIGE HETEROSTRUCTURES - INFLUENCE OF THE RELAXED SIGE BUFFER LAYER
F Schaffler, D Toebben, HJ Herzog, et al.
Semiconductor Science and Technology 7 (2), 260-266, 1992
1801992
Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates
Z Zhong, A Halilovic, T Fromherz, F Schäffler, G Bauer
Applied Physics Letters 82 (26), 4779-4781, 2003
1622003
Type-II band alignment in Si/ quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory
T Baier, U Mantz, K Thonke, R Sauer, F Schäffler, HJ Herzog
Physical Review B 50 (20), 15191, 1994
1491994
Spin Manipulation of Free Two-Dimensional Electrons in Quantum Wells
AM Tyryshkin, SA Lyon, W Jantsch, F Schäffler
Physical review letters 94 (12), 126802, 2005
1352005
Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates
Z Zhong, A Halilovic, M Mühlberger, F Schäffler, G Bauer
Journal of Applied Physics 93 (10), 6258-6264, 2003
1252003
Lasing from glassy Ge quantum dots in crystalline Si
M Grydlik, F Hackl, H Groiss, M Glaser, A Halilovic, T Fromherz, W Jantsch, ...
ACS photonics 3 (2), 298-303, 2016
1232016
Kinetic growth instabilities on vicinal Si (001) surfaces
C Schelling, G Springholz, F Schäffler
Physical review letters 83 (5), 995, 1999
1231999
Centrosymmetric PbTe∕ CdTe quantum dots coherently embedded by epitaxial precipitation
W Heiss, H Groiss, E Kaufmann, G Hesser, M Böberl, G Springholz, ...
Applied physics letters 88 (19), 2006
1172006
Lattice parameter in epilayers: Deviation from Vegard’s rule
M Berti, D De Salvador, AV Drigo, F Romanato, J Stangl, S Zerlauth, ...
Applied physics letters 72 (13), 1602-1604, 1998
1171998
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset
M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ...
Physical Review B—Condensed Matter and Materials Physics 80 (20), 205321, 2009
1162009
p-type Ge-channel MODFETs with high transconductance grown on Si substrates
U Konig, F Schaffler
IEEE electron device letters 14 (4), 205-207, 1993
1161993
Delayed Plastic Relaxation on Patterned Si Substrates: <?format ?>Coherent SiGe Pyramids with Dominant Facets
Z Zhong, W Schwinger, F Schäffler, G Bauer, G Vastola, F Montalenti, ...
Physical review letters 98 (17), 176102, 2007
1142007
Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
U König, AJ Boers, F Schäffler, E Kasper
Electronics Letters 28 (2), 160-162, 1992
1101992
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Články 1–20