| Phase stability, electronic structure, and optical properties of indium oxide polytypes SZ Karazhanov, P Ravindran, P Vajeeston, A Ulyashin, TG Finstad, ... Physical Review B—Condensed Matter and Materials Physics 76 (7), 075129, 2007 | 287 | 2007 |
| Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon K Cho, M Numan, TG Finstad, WK Chu, J Liu, JJ Wortman Applied physics letters 47 (12), 1321-1323, 1985 | 137 | 1985 |
| Lattice-matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors CJ Palmstro Applied physics letters 56 (4), 382-384, 1990 | 94 | 1990 |
| Doping of p‐type ZnSb: Single parabolic band model and impurity band conduction PHM Böttger, GS Pomrehn, GJ Snyder, TG Finstad physica status solidi (a) 208 (12), 2753-2759, 2011 | 87 | 2011 |
| A Xe marker study of the transformation of Ni2Si to NiSi in thin films TG Finstad Physica status solidi (a) 63 (1), 223-228, 1981 | 83 | 1981 |
| Channeling effect for low energy ion implantation in Si K Cho, WR Allen, TG Finstad, WK Chu, J Liu, JJ Wortman Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1985 | 81 | 1985 |
| Reaction of silicon with films of Co Ni alloys: Phase separation of the monosilicides and nucleation of the disilicides FM d'Heurle, DD Anfiteatro, VR Deline, TG Finstad Thin Solid Films 128 (1-2), 107-124, 1985 | 75 | 1985 |
| The role of grain boundary scattering in reducing the thermal conductivity of polycrystalline XNiSn (X = Hf, Zr, Ti) half-Heusler alloys M Schrade, K Berland, SNH Eliassen, MN Guzik, C Echevarria-Bonet, ... Scientific reports 7 (1), 13760, 2017 | 72 | 2017 |
| AlAl thermocompression bonding for wafer-level MEMS sealing N Malik, K Schjølberg-Henriksen, E Poppe, MMV Taklo, TG Finstad Sensors and Actuators A: Physical 211, 115-120, 2014 | 72 | 2014 |
| Etch rates of (100),(111) and (110) single-crystal silicon in TMAH measured in situ by laser reflectance interferometry E Steinsland, T Finstad, A Hanneborg Sensors and Actuators A: Physical 86 (1-2), 73-80, 2000 | 71 | 2000 |
| Measurement of thin film thermal conductivity using the laser flash method M Ruoho, K Valset, T Finstad, I Tittonen Nanotechnology 26 (19), 195706, 2015 | 68 | 2015 |
| Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy U Serincan, G Kartopu, A Guennes, TG Finstad, R Turan, Y Ekinci, ... Semiconductor science and technology 19 (2), 247, 2003 | 68 | 2003 |
| Thermoelectric properties of Cu doped ZnSb containing Zn3P2 particles K Valset, PHM Böttger, J Taftø, TG Finstad Journal of Applied Physics 111 (2), 2012 | 66 | 2012 |
| Design and construction of a four-point bending based set-up for measurement of piezoresistance in semiconductors E Lund, TG Finstad Review of scientific instruments 75 (11), 4960-4966, 2004 | 66 | 2004 |
| Structural study of GaSb/AlSb strained-layer superlattice CK Pan, DC Zheng, TG Finstad, WK Chu, VS Speriosu, MA Nicolet, ... Physical Review B 31 (3), 1270, 1985 | 63 | 1985 |
| Silicide formation with nickel and platinum double layers on silicon TG Finstad Thin Solid Films 51 (3), 411-424, 1978 | 61 | 1978 |
| High temperature transport properties of thermoelectric CaMnO3− δ—Indication of strongly interacting small polarons M Schrade, R Kabir, S Li, T Norby, TG Finstad Journal of Applied Physics 115 (10), 2014 | 58 | 2014 |
| Electronic Transport Properties of [Ca2CoO3−δ]q[CoO2] M Schrade, H Fjeld, TG Finstad, T Norby The Journal of Physical Chemistry C 118 (6), 2908-2918, 2014 | 57 | 2014 |
| Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing T Brat, CM Osburn, T Finstad, J Liu, B Ellington Journal of the Electrochemical Society 133 (7), 1451, 1986 | 56 | 1986 |
| The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solution TG Finstad, DD Anfiteatro, VR Deline, FM d'Heurle, P Gas, VL Moruzzi, ... Thin Solid Films 135 (2), 229-243, 1986 | 52 | 1986 |
Rasit TuranProfessor of PhysicsE-mailová adresa ověřena na: metu.edu.tr
