Kevin Grossklaus

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Thomas VanderveldeTufts UniversityE-mailová adresa ověřena na: ece.tufts.edu
Margaret StevensUS Naval Research LaboratoryE-mailová adresa ověřena na: nrl.navy.mil
Paul J SimmondsTufts UniversityE-mailová adresa ověřena na: tufts.edu
BAOLAI LIANGUCLAE-mailová adresa ověřena na: cnsi.ucla.edu
Kevin D. VallejoIdaho National LaboratoryE-mailová adresa ověřena na: inl.gov
Carlos I Cabrera PerdomoAutonomous University of ZacatecasE-mailová adresa ověřena na: uaz.edu.mx
Shafat JahangirIntel Corporation; University of Michigan; Bangladesh University of Engineering and TechnologyE-mailová adresa ověřena na: umich.edu
Animesh BanerjeeUniversity of MichiganE-mailová adresa ověřena na: umich.edu
Nicole PfiesterRose-Hulman Institute of TechnologyE-mailová adresa ověřena na: rose-hulman.edu
Samuel L. LenneyTufts UniversityE-mailová adresa ověřena na: tufts.edu
Carol HandwerkerProfessor of Materials Engineering, Purdue UniversityE-mailová adresa ověřena na: purdue.edu
Suvankar SenguptaFlexEnergy LLCE-mailová adresa ověřena na: flexenergyllc.com
Eric StachDepartment of Materials Science and Engineering, University of PennsylvaniaE-mailová adresa ověřena na: seas.upenn.edu
Alan RaeConsulting in MaterialsE-mailová adresa ověřena na: buffalo.edu
Sanjay KrishnaProfessor and George R Smith Chair of Engineering, ECE Department, Ohio State UniversityE-mailová adresa ověřena na: osu.edu
Stefan ZollnerNew Mexico State UniversityE-mailová adresa ověřena na: nmsu.edu
Christopher BallResearch Scientist, The Ohio State UniversityE-mailová adresa ověřena na: osu.edu
Anthony GrbicUniversity of MichiganE-mailová adresa ověřena na: umich.edu
Prashant DeshlahraTufts UniversityE-mailová adresa ověřena na: tufts.edu
Husain AdamjiGraduate Student, Massachusetts Institute of TechnologyE-mailová adresa ověřena na: mit.edu

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Kevin Grossklaus

MIT Lincoln Laboratory

E-mailová adresa ověřena na: mit.edu

quantum electronics MBE thin film growth III-V semiconductors materials characterization


Název Seřadit podle citací Seřadit podle roku Seřadit podle názvu	Citace Citace	Rok
Misorientation defects in coalesced self-catalyzed GaN nanowires KA Grossklaus, A Banerjee, S Jahangir, P Bhattacharya, JM Millunchick Journal of crystal growth 371, 142-147, 2013	61	2013
Red-Emitting ( nm) In_0.51Ga_0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon S Jahangir, T Schimpke, M Strassburg, KA Grossklaus, JM Millunchick, ... IEEE Journal of Quantum Electronics 50 (7), 530-537, 2014	54	2014
Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors KA Grossklaus, JM Millunchick Journal of Applied Physics 109 (1), 2011	37	2011
Utilizing the thermodynamic nanoparticle size effects for low temperature Pb-free solder JP Koppes, KA Grossklaus, AR Muza, RR Revur, S Sengupta, A Rae, ... Materials Science and Engineering: B 177 (2), 197-204, 2012	32	2012
Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness CF Schuck, SK Roy, T Garrett, Q Yuan, Y Wang, CI Cabrera, ... Scientific reports 9 (1), 18179, 2019	28	2019
Strain stabilization of far from equilibrium GaAsBi films MA Stevens, KA Grossklaus, TE Vandervelde Journal of Crystal Growth 527, 125216, 2019	17	2019
Subwavelength antimonide infrared detector coupled with dielectric resonator antenna A Kazemi, Q Shu, V Dahiya, Z Taghipour, P Paradis, C Ball, ... Infrared Technology and Applications XLV 11002, 434-441, 2019	16	2019
Self-assembly of tensile-strained Ge quantum dots on InAlAs (111) A KE Sautter, CF Schuck, TA Garrett, AE Weltner, KD Vallejo, D Ren, ... Journal of Crystal Growth 533, 125468, 2020	14	2020
Impact of rotation rate on bismuth saturation in GaAsBi grown by molecular beam epitaxy MA Stevens, KA Grossklaus, JH McElearney, TE Vandervelde Journal of Electronic Materials 48, 3376-3382, 2019	12	2019
Effect of microstructure on the optical properties of sputtered iridium thin films NA Pfiester, KA Grossklaus, MA Stevens, TE Vandervelde Optical Materials Express 10 (4), 1120-1128, 2020	11	2020
Tunable mid-infrared interband emission from tensile-strained InGaAs quantum dots KD Vallejo, CI Cabrera-Perdomo, TA Garrett, MD Drake, B Liang, ... ACS nano 17 (3), 2318-2327, 2023	8	2023
Tensile-strained self-assembly of InGaAs on InAs (111) A KD Vallejo, TA Garrett, CI Cabrera, B Liang, KA Grossklaus, PJ Simmonds Journal of Vacuum Science & Technology B 39 (6), 2021	7	2021
Focused ion beam creation and templating of InAs and InAs/InP nanospikes KA Grossklaus, JM Millunchick Nanotechnology 22 (35), 355302, 2011	7	2011
Characterization of tellurium and silicon as n-type dopants for GaAsBi MA Stevens, S Lenney, J McElearney, KA Grossklaus, TE Vandervelde Semiconductor Science and Technology 35 (10), 105006, 2020	6	2020
Direct Integration of GaSb with GaAs (111) A Using Interfacial Misfit Arrays MD Nordstrom, TA Garrett, P Reddy, J McElearney, JR Rushing, ... Crystal Growth & Design 23 (12), 8670-8677, 2023	3	2023
Density functional theory analysis of the effect of structural configurations on the stability of GaAsBi compounds H Adamji, M Stevens, K Grossklaus, TE Vandervelde, P Deshlahra Computational Materials Science 173, 109401, 2020	3	2020
Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb (100) thin films over a wide range of growth temperatures TP Menasuta, KA Grossklaus, JH McElearney, TE Vandervelde Journal of Vacuum Science & Technology A 42 (3), 2024	2	2024
Variation in thermal stability of Ge1− xSnx films for infrared device applications AN Lemire, KA Grossklaus, TE Vandervelde Journal of Vacuum Science & Technology A 41 (5), 2023	2	2023
Large-area 1D selective emitter for thermophotovoltaic applications in the mid-infrared M Oh, K Grossklaus, TE Vandervelde Journal of Vacuum Science & Technology B 41 (1), 2023	2	2023
GaAsBi devices for thermal energy conversion M Stevens, A Licht, N Pfiester, E Carlson, K Grossklaus, TE Vandervelde 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 701-705, 2017	2	2017

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