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Sunil Singh Kushvaha
Sunil Singh Kushvaha
Principal Scientist, 2D Physics and QHR, CSIR-National Physical Laboratory
E-mailová adresa ověřena na: nplindia.org
Název
Citace
Citace
Rok
Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
SS Kushvaha, MS Kumar, KK Maurya, MK Dalai, ND Sharma
AIP Advances 3 (9), 092109, 2013
712013
Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy
SS Kushvaha, MS Kumar, AK Shukla, BS Yadav, DK Singh, M Jewariya, ...
RSC Advances 5 (107), 87818-87830, 2015
552015
Study of preferential localized degradation and breakdown of HfO 2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO 2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic Engineering 109, 364-369, 2013
552013
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
C Ramesh, P Tyagi, B Bhattacharyya, S Husale, KK Maurya, MS Kumar, ...
Journal of Alloys and Compounds 770, 572-581, 2019
492019
Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness
S Gautam, V Aggarwal, B Singh, VPS Awana, R Ganesan, SS Kushvaha
Scientific Reports 12 (1), 9770, 2022
482022
Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 072902, 2011
392011
Self-assembly of antimony nanowires on graphite
XS Wang, SS Kushvaha, Z Yan, W Xiao
Applied Physics Letters 88 (23), 233105, 2006
352006
Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy
SS Kushvaha, MS Kumar, BS Yadav, PK Tyagi, S Ojha, KK Maurya, ...
CrystEngComm 18, 744-753, 2016
342016
Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy
SS Kushvaha, P Pal, AK Shukla, AG Joshi, G Gupta, M Kumar, S Singh, ...
AIP Advances 4 (2), 027114, 2014
322014
Light assisted irreversible resistive switching in ultra thin hafnium oxide
H Borkar, A Thakre, SS Kushvaha, RP Aloysius, A Kumar
RSC Advances 5 (44), 35046-35051, 2015
312015
Structural, electronic and thermoelectric properties of Bi2Se3 thin films deposited by RF magnetron sputtering
S Gautam, AK Verma, A Balapure, B Singh, R Ganesan, MS Kumar, ...
Journal of Electronic Materials 51 (5), 2500-2509, 2022
282022
Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
P Tyagi, C Ramesh, J Kaswan, S Dhua, S John, AK Shukla, SC Roy, ...
Journal of Alloys and Compounds 805, 97-103, 2019
272019
Synthesis and magnetic properties of MnSb nanoparticles on Si-based substrates
H Zhang, SS Kushvaha, S Chen, X Gao, D Qi, ATS Wee, XS Wang
Applied Physics Letters 90 (20), 202503, 2007
272007
Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications
V Aggarwal, C Ramesh, P Tyagi, S Gautam, A Sharma, S Husale, ...
Materials Science in Semiconductor Processing 125, 105631, 2021
232021
Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy
SS Kushvaha, MS Kumar, M Maheshwari, AK Shukla, P Pal, KK Maurya
Materials Research Express 1 (3), 035903, 2014
232014
Photoconductivity and photo-detection response of multiferroic bismuth iron oxide
A Anshul, H Borkar, P Singh, P Pal, SS Kushvaha, A Kumar
Applied Physics Letters 104 (13), 132910, 2014
222014
Highly Responsive Near-Infrared Si/Sb2Se3 Photodetector via Surface Engineering of Silicon
Y Singh, R Parmar, A Srivastava, R Yadav, K Kumar, S Rani, Shashi, ...
ACS Applied Materials & Interfaces 15, 25, 2023
212023
Charge transfer induced symmetry breaking in GaN/Bi2Se3 topological heterostructure device
F Ahmad, R Kumar, SS Kushvaha, M Kumar, P Kumar
npj 2D Materials and Applications 6, 12 (1-9), 2022
212022
Topological Bi2Se3/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors
R Kumar, V Aggarwal, A Yadav, S Gautam, S Singh, R Ganesan, ...
ACS Applied Electronic Materials 5, 3981-3992, 2023
202023
Chirality control and switching of vortices formed in hexagonal shaped ferromagnetic elements
SYH Lua, SS Kushvaha, YH Wu, KL Teo, TC Chong
Applied Physics Letters 93 (12), 122504, 2008
202008
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–20