| Proper accounting for time increases crop-based biofuels’ greenhouse gas deficit versuspetroleum M O’Hare, RJ Plevin, JI Martin, AD Jones, A Kendall, E Hopson Environmental Research Letters 4 (2), 024001, 2009 | 212 | 2009 |
| Mechanical and dielectric properties of pure-silica-zeolite low-k materials Z Li, MC Johnson, M Sun, ET Ryan, DJ Earl, W Maichen, JI Martin, S Li, ... ANGEWANDTE CHEMIE-INTERNATIONAL EDITION IN ENGLISH- 45 (38), 6329, 2006 | 156 | 2006 |
| Polymer brushes: Scaling, compression forces, interbrush penetration, and solvent size effects JI Martin, ZG Wang The Journal of Physical Chemistry 99 (9), 2833-2844, 1995 | 123 | 1995 |
| Examining the equity impacts of autonomous vehicles: a travel demand model approach J Cohn, R Ezike, J Martin, K Donkor, M Ridgway, M Balding Transportation research record 2673 (5), 23-35, 2019 | 67 | 2019 |
| NH3/N2-plasma treatment to prevent organic ILD degradation M Van Ngo, D Hopper, J Martin US Patent 6,436,808, 2002 | 56 | 2002 |
| Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL D Edelstein, H Rathore, C Davis, L Clevenger, A Cowley, T Nogami, ... 2004 IEEE International Reliability Physics Symposium. Proceedings, 316-319, 2004 | 42 | 2004 |
| Effects of polymer brush self-assembly on spreading and thin film stability JI Martin, ZG Wang, M Schick Langmuir 12 (20), 4950-4959, 1996 | 38 | 1996 |
| Dielectric formation to seal porosity of low dielectic constant (low k) materials after etch P Besser, S Dakshina-Murthy, J Martin, J Smith, E Apelgren US Patent App. 09/487,531, 2001 | 35 | 2001 |
| Effect of material properties on integration damage in organosilicate glass films ET Ryan, J Martin, K Junker, J Wetzel, DW Gidley, J Sun Journal of Materials Research 16 (12), 3335-3338, 2001 | 31 | 2001 |
| Integration of SiCN as a low/spl kappa/etch stop and Cu passivation in a high performance Cu/low/spl kappa/interconnect J Martin, S Filipiak, T Stephens, F Huang, M Aminpur, J Mueller, ... Proceedings of the IEEE 2002 International Interconnect Technology …, 2002 | 28 | 2002 |
| Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology D Edelstein, C Davis, L Clevenger, M Yoon, A Cowley, T Nogami, ... Proceedings of the IEEE 2004 International Interconnect Technology …, 2004 | 26 | 2004 |
| Perspective: Don't foul the water J Martin Nature 474 (7352), S17-S17, 2011 | 25 | 2011 |
| Copper damascene with low-k capping layer and improved electromigration reliability M Van Ngo, JI Martin, H Ruelke US Patent 6,797,652, 2004 | 24 | 2004 |
| Resist trim process to define small openings in dielectric layers S Dakshina-Murthy, PR Besser, JB Smith, EM Apelgren, C Zistl, JI Martin, ... US Patent 6,500,755, 2002 | 23* | 2002 |
| Locally increasing sidewall density by ion implantation EM Apelgren, C Zistl, JI Martin, PR Besser, F Cheung US Patent 6,610,594, 2003 | 22 | 2003 |
| Semiconductor component and method of manufacture KS Sahota, J Martin, RJ Huang, JJ Xie US Patent 6,927,113, 2005 | 19 | 2005 |
| Method and test structure for characterizing sidewall damage in a semiconductor device JI Martin, NJ Kepler, LL Zhao US Patent 6,600,333, 2003 | 18 | 2003 |
| Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films JI Martin, TY Tsui US Patent 6,498,112, 2002 | 18 | 2002 |
| Polymer‐tethered ligand–receptor interactions between surfaces JI Martin, CZ Zhang, ZG Wang Journal of Polymer Science Part B: Polymer Physics 44 (18), 2621-2637, 2006 | 17 | 2006 |
| Competition between direct and concerted movements in surface diffusion with application to the Au (110) surface LD Roelofs, JI Martin, R Sheth Surface science 250 (1-3), 17-26, 1991 | 17 | 1991 |
Paul BesserARME-mailová adresa ověřena na: graystar.com
