| Intrinsic current− voltage characteristics of graphene nanoribbon transistors and effect of edge doping Q Yan, B Huang, J Yu, F Zheng, J Zang, J Wu, BL Gu, F Liu, W Duan Nano letters 7 (6), 1469-1473, 2007 | 700 | 2007 |
| Adsorption of gas molecules on graphene nanoribbons and its implication for nanoscale molecule sensor B Huang, Z Li, Z Liu, G Zhou, S Hao, J Wu, BL Gu, W Duan The Journal of Physical Chemistry C 112 (35), 13442-13446, 2008 | 688 | 2008 |
| Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors C Huang, J Feng, F Wu, D Ahmed, B Huang, H Xiang, K Deng, E Kan Journal of the American Chemical Society 140 (36), 11519-11525, 2018 | 330 | 2018 |
| Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy K Wang, B Huang, M Tian, F Ceballos, MW Lin, M Mahjouri-Samani, ... ACS nano 10 (7), 6612-6622, 2016 | 321 | 2016 |
| Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy X Li, MW Lin, J Lin, B Huang, AA Puretzky, C Ma, K Wang, W Zhou, ... Science Advances 2 (4), e1501882, 2016 | 299 | 2016 |
| Quantum manifestations of graphene edge stress and edge instability: A first-principles study B Huang, M Liu, N Su, J Wu, W Duan, B Gu, F Liu Physical review letters 102 (16), 166404, 2009 | 271 | 2009 |
| Defect and impurity properties of hexagonal boron nitride: A first-principles calculation B Huang, H Lee Physical Review B—Condensed Matter and Materials Physics 86 (24), 245406, 2012 | 241 | 2012 |
| Suppression of spin polarization in graphene nanoribbons by edge defects and impurities B Huang, F Liu, J Wu, BL Gu, W Duan Physical Review B—Condensed Matter and Materials Physics 77 (15), 153411, 2008 | 230 | 2008 |
| Making a field effect transistor on a single graphene nanoribbon by selective doping B Huang, Q Yan, G Zhou, J Wu, BL Gu, W Duan, F Liu Applied Physics Letters 91 (25), 2007 | 194 | 2007 |
| Towards direct-gap silicon phases by the inverse band structure design approach HJ Xiang, B Huang, E Kan, SH Wei, XG Gong Physical review letters 110 (11), 118702, 2013 | 187 | 2013 |
| Effective Control of the Charge and Magnetic States of Transition-Metal<? format?> Atoms on Single-Layer Boron Nitride B Huang, H Xiang, J Yu, SH Wei Physical review letters 108 (20), 206802, 2012 | 174 | 2012 |
| Crystal and electronic structures of CuxS solar cell absorbers Q Xu, B Huang, Y Zhao, Y Yan, R Noufi, SH Wei Applied Physics Letters 100 (6), 2012 | 166 | 2012 |
| Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene X Li, L Basile, B Huang, C Ma, J Lee, IV Vlassiouk, AA Puretzky, MW Lin, ... ACS nano 9 (8), 8078-8088, 2015 | 147 | 2015 |
| Chemical functionalization of graphene nanoribbons by carboxyl groups on stone-wales defects F OuYang, B Huang, Z Li, J Xiao, H Wang, H Xu The Journal of Physical Chemistry C 112 (31), 12003-12007, 2008 | 142 | 2008 |
| Ordered semiconducting nitrogen-graphene alloys HJ Xiang, B Huang, ZY Li, SH Wei, JL Yang, XG Gong Physical Review X 2 (1), 011003, 2012 | 127 | 2012 |
| Charge density waves in infinite-layer NdNiO nickelates CC Tam, J Choi, X Ding, S Agrestini, A Nag, B Huang, H Luo, ... Nature Materials 21, 1116, 2022 | 122 | 2022 |
| CuZn(Sn,Ge)Se and CuZn(Sn,Si)Se alloys as photovoltaic materials: Structural and electronic properties Q Shu, JH Yang, S Chen, B Huang, H Xiang, XG Gong, SH Wei Physical Review B—Condensed Matter and Materials Physics 87 (11), 115208, 2013 | 119 | 2013 |
| Exceptional optoelectronic properties of hydrogenated bilayer silicene B Huang, HX Deng, H Lee, M Yoon, BG Sumpter, F Liu, SC Smith, SH Wei Physical Review X 4 (2), 021029, 2014 | 112 | 2014 |
| Alloy engineering of defect properties in semiconductors: suppression of deep levels in transition-metal dichalcogenides B Huang, M Yoon, BG Sumpter, SH Wei, F Liu Physical review letters 115 (12), 126806, 2015 | 106 | 2015 |
| Intrinsic Two-Dimensional Organic Topological Insulators in Metal-DCA lattices FL L. Z. Zhang, Z. F. Wang, Bing Huang, B. Cui, Zhiming Wang, S. X. Du, H.-J ... Nano letters 16 (3), 2072, 2016 | 103* | 2016 |
Suhuai WeiEastern Institute of Technology, Ningbo, ChinaE-mailová adresa ověřena na: eitech.edu.cn
