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Alireza Moazzeni
Alireza Moazzeni
Research Assistant and PhD Candidate at Wayne State University
E-mailová adresa ověřena na: wayne.edu
Název
Citace
Citace
Rok
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO
A Moazzeni, S Kordrostami, Zoheir, Hamedi
Solid-State Electronics 188, 108208, 2022
182022
Fabrication of Graphene Oxide-Based Resistive Switching Memory by the Spray Pyrolysis Technique for Neuromorphic Computing
A Moazzeni, H Riyahi Madvar, S Hamedi, Z Kordrostami
ACS Applied Nano Materials 6 (3), 2236-2248, 2023
172023
Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices
A Moazzeni, MTR Chowdhury, C Rouleau, G Tutuncuoglu
2023 IEEE International Conference on Electro Information Technology (eIT …, 2023
22023
The Impact of Operation Conditions on Potentiation, Depression and Endurance Dynamics of Tantalum Oxide RRAMs
A Moazzeni, MTR Chowdhury, G Tutuncuoglu
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023
2023
Fabrication of non-volatile resistive switching memory based on Graphene oxide and PEDOT: PSS mixture
A Moazzeni, S Hamedi
2020 28th Iranian Conference on Electrical Engineering (ICEE), 1-4, 2020
2020
An Electrical model for defects in resistive switching RAM
SH Alireza Moazzeni
2nd Iranian Conference of Microelectronic, 2020
2020
Systém momentálně nemůže danou operaci provést. Zkuste to znovu později.
Články 1–6