Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon T Frost, S Jahangir, E Stark, S Deshpande, A Hazari, C Zhao, BS Ooi, ...
Nano letters 14 (8), 4535-4541, 2014
182 2014 An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ...
Nanoscale 7 (40), 16658-16665, 2015
111 2015 Molecular beam epitaxial growth and optical properties of red-emitting (λ= 650 nm) InGaN/GaN disks-in-nanowires on silicon S Jahangir, M Mandl, M Strassburg, P Bhattacharya
Applied Physics Letters 102 (7), 2013
99 2013 Formation and nature of InGaN quantum dots in GaN nanowires S Deshpande, T Frost, L Yan, S Jahangir, A Hazari, X Liu, ...
Nano letters 15 (3), 1647-1653, 2015
83 2015 Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity J Heo, S Jahangir, B Xiao, P Bhattacharya
Nano letters 13 (6), 2376-2380, 2013
66 2013 Misorientation defects in coalesced self-catalyzed GaN nanowires KA Grossklaus, A Banerjee, S Jahangir, P Bhattacharya, JM Millunchick
Journal of crystal growth 371, 142-147, 2013
61 2013 Red-Emitting (0.51 Ga0.49 N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon S Jahangir, T Schimpke, M Strassburg, KA Grossklaus, JM Millunchick, ...
IEEE Journal of Quantum Electronics 50 (7), 530-537, 2014
54 2014 Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts H Kum, J Heo, S Jahangir, A Banerjee, W Guo, P Bhattacharya
Applied Physics Letters 100 (18), 2012
53 2012 Structural and optical properties of disc-in-wire InGaN/GaN LEDs L Yan, S Jahangir, SA Wight, B Nikoobakht, P Bhattacharya, ...
Nano letters 15 (3), 1535-1539, 2015
45 2015 Small signal modulation characteristics of red-emitting (λ= 610 nm) III-nitride nanowire array lasers on (001) silicon S Jahangir, T Frost, A Hazari, L Yan, E Stark, T LaMountain, ...
Applied Physics Letters 106 (7), 2015
40 2015 Spin diffusion in bulk GaN measured with MnAs spin injector S Jahangir, F Doğan, H Kum, A Manchon, P Bhattacharya
Physical Review B—Condensed Matter and Materials Physics 86 (3), 035315, 2012
32 2012 Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes S Jahangir, I Pietzonka, M Strassburg, P Bhattacharya
Applied Physics Letters 105 (11), 2014
28 2014 InGaN/GaN nanowires grown on SiO_2 and light emitting diodes with low turn on voltages Y Park, S Jahangir, Y Park, P Bhattacharya, J Heo
Optics express 23 (11), A650-A656, 2015
24 2015 Carrier lifetimes in green emitting InGaN/GaN disks‐in‐nanowire and characteristics of green light emitting diodes S Jahangir, A Banerjee, P Bhattacharya
physica status solidi c 10 (5), 812-815, 2013
20 2013 Temperature-dependent measurement of Auger recombination in In0. 40Ga0. 60N/GaN red-emitting (λ= 630 nm) quantum dots T Frost, A Banerjee, S Jahangir, P Bhattacharya
Applied Physics Letters 104 (8), 2014
15 2014 III-nitride electrically pumped visible and near-infrared nanowire lasers on (001) silicon P Bhattacharya, A Hazari, S Jahangir, W Guo, T Frost
Semiconductors and Semimetals 96, 385-409, 2017
12 2017 Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED TK Ng, C Zhao, C Shen, S Jahangir, B Janjua, AB Slimane, CH Kang, ...
2014 Conference on Lasers and Electro-optics (CLEO)-Laser Science to …, 2014
12 2014 InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy A Banerjee, T Frost, S Jahangir, E Stark, P Bhattacharya
Journal of crystal growth 378, 566-570, 2013
10 2013 A numerical model for solving two dimensional Poisson-Schrödinger equation in depletion all around operation of the SOI four gate transistor S Jahangir, QDM Khosru
2009 IEEE International Conference of Electron Devices and Solid-State …, 2009
10 2009 III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range P Bhattacharya, A Hazari, S Jahangir
Novel In-Plane Semiconductor Lasers XVII 10553, 1055302, 2018
9 2018 
Thomas FrostUniversity of MichiganE-mailová adresa ověřena na: umich.edu
