Michael Shur

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Remis GaskaUVTON, Inc.Verificeret mail på uvton.com
Grigory SiminUniversity of South CarolinaVerificeret mail på engr.sc.edu
Max ShatalovCVD Equipment CorporationVerificeret mail på cvdequipment.com
Taiichi OtsujiRIEC, Tohoku UniversityVerificeret mail på riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDVerificeret mail på unipress.waw.pl
Maxim RyzhiiS. Associate Professor, University of AizuVerificeret mail på u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityVerificeret mail på fiu.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloVerificeret mail på buffalo.edu
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLAVerificeret mail på seas.ucla.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTVerificeret mail på kaist.ac.kr
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Verificeret mail på soire.renet.ru
Dmitry VekslerHRL LaboratoryVerificeret mail på hrl.com
Qhalid FareedTexas InstrumentsVerificeret mail på ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSVerificeret mail på umontpellier.fr
Guanxiong LiuUniversity of California RiversideVerificeret mail på ee.ucr.edu
Juras MickeviciusVilnius UniversityVerificeret mail på ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombVerificeret mail på umontpellier.fr
Mikhail GaevskiCVD Equipment CorporationVerificeret mail på CVDEquipment.com
Hadis MorkoçVirginia Commonwealth UniversityVerificeret mail på vcu.edu
Irina KhmyrovaUniversity of AizuVerificeret mail på u-aizu.ac.jp

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Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Verificeret mail på rpi.edu - Startside

semiconductors


Titel Sortér efter henvisninger Sortér efter årstal Sortér efter titel	Citeret af Citeret af	År
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2204	2001
Handbook series on semiconductor parameters M Levinshtein World Scientific, 1997	2053*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1501	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1355	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 2002	1302	2002
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1046	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	994	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	836	1980
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	690	2000
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	688	1999
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	644	2005
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	604	1991
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	597	1984
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	546	2006
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	539	2012
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	534	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	518	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	503	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	480	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	475	1997

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