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Haichang Lu
Haichang Lu
Beihang University | University of Cambridge | Peking University
Verificeret mail på buaa.edu.cn
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Passivating the sulfur vacancy in monolayer MoS2
H Lu, A Kummel, J Robertson
APL Materials 6 (6), 2018
912018
Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators
H Wang, H Wu, J Zhang, Y Liu, D Chen, C Pandey, J Yin, D Wei, N Lei, ...
Nature communications 14 (1), 5173, 2023
662023
Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature
H Wang, H Lu, Z Guo, A Li, P Wu, J Li, W Xie, Z Sun, P Li, H Damas, ...
Nature Communications 14 (1), 2483, 2023
552023
The metal–insulator phase change in vanadium dioxide and its applications
H Lu, S Clark, Y Guo, J Robertson
Journal of Applied Physics 129 (24), 2021
492021
Insertion of an ultrathin Al 2 O 3 interfacial layer for Schottky barrier height reduction in WS 2 field-effect transistors
S Zheng, H Lu, H Liu, D Liu, J Robertson
Nanoscale 11 (11), 4811-4821, 2019
332019
Modeling of surface gap state passivation and Fermi level de-pinning in solar cells
H Lu, Y Guo, H Li, J Robertson
Applied Physics Letters 114 (22), 2019
322019
Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe, Co magnetic tunnel junctions
H Lu, J Robertson, H Naganuma
Applied Physics Reviews 8 (3), 2021
282021
Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2
H Lu, Y Guo, J Robertson
Applied Physics Letters 112 (6), 2018
282018
Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide
H Lu, S Clark, Y Guo, J Robertson
Physical Chemistry Chemical Physics 22 (24), 13474-13478, 2020
172020
Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
H Lu, Y Guo, J Robertson
ACS Applied Materials & Interfaces 13 (39), 47226-47235, 2021
152021
Charge transfer doping of graphene without degrading carrier mobility
H Lu, Y Guo, J Robertson
Journal of Applied Physics 121 (22), 2017
152017
Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2
X Wang, W Yang, W Yang, Y Cao, X Lin, G Wei, H Lu, P Tang, W Zhao
Applied Physics Reviews 9 (3), 2022
142022
Atomic structure and electronic structure of disordered graphitic carbon nitride
H Lu, Y Guo, JW Martin, M Kraft, J Robertson
Carbon 147, 483-489, 2019
142019
Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides
H Lu, Y Guo, J Robertson
Journal of Applied Physics 120 (6), 2016
142016
Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors
Z Zhang, Y Guo, H Lu, SJ Clark, J Robertson
Applied Physics Letters 116 (13), 2020
132020
Microstructure scaling of metal–insulator transition properties of VO2 films
KM Niang, G Bai, H Lu, J Robertson
Applied Physics Letters 118 (12), 2021
122021
Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys
H Lu, Y Guo, J Robertson
Physical Review Materials 3 (9), 094603, 2019
122019
Density functional theory studies of the metal–insulator transition in vanadium dioxide alloys
H Lu, J Robertson
physica status solidi (b) 256 (12), 1900210, 2019
82019
Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure
H Wang, H Wu, Y Liu, D Chen, C Pandey, J Yin, D Wei, N Lei, J Zhang, ...
arXiv preprint arXiv:2111.14128, 2021
72021
Dirac-point shift by carrier injection barrier in graphene field-effect transistor operation at room temperature
S Lee, A Nathan, J Alexander-Webber, P Braeuninger-Weimer, ...
ACS applied materials & interfaces 10 (13), 10618-10621, 2018
52018
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