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Victor Boureau
Victor Boureau
EPFL - Interdisciplinary Center for Electron Microscopy (CIME)
Verificeret mail på epfl.ch
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Strained crystalline nanomechanical resonators with quality factors above 10 billion
A Beccari, DA Visani, SA Fedorov, MJ Bereyhi, V Boureau, NJ Engelsen, ...
Nature Physics 18 (4), 436-441, 2022
762022
Crystal growth of bullet-shaped magnetite in magnetotactic bacteria of the Nitrospirae phylum
J Li, N Menguy, C Gatel, V Boureau, E Snoeck, G Patriarche, E Leroy, ...
Journal of the Royal Society Interface 12 (103), 20141288, 2015
702015
Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy.
B Haas, JL Rouviere, V Boureau, R Berthier, D Cooper
Ultramicroscopy 198, 58-72, 2019
622019
Effect of bias on the response of GaN axial p–n junction single-nanowire photodetectors
S Cuesta, M Spies, V Boureau, F Donatini, M Hocevar, MI Den Hertog, ...
Nano Letters 19 (8), 5506-5514, 2019
462019
Off-axis electron holography combining summation of hologram series with double-exposure phase-shifting: theory and application
V Boureau, R McLeod, B Mayall, D Cooper
Ultramicroscopy 193, 52-63, 2018
372018
High Performance Semiconducting Nanosheets via a Scalable Powder-Based Electrochemical Exfoliation Technique
RA Wells, M Zhang, TH Chen, V Boureau, M Caretti, Y Liu, JH Yum, ...
ACS nano 16 (4), 5719-5730, 2022
332022
Improved measurement of electric fields by nanobeam precession electron diffraction
L Bruas, V Boureau, AP Conlan, S Martinie, JL Rouviere, D Cooper
Journal of Applied Physics 127 (20), 2020
322020
High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast
V Boureau, M Staňo, JL Rouviere, JC Toussaint, O Fruchart, D Cooper
Journal of Physics D: Applied Physics 54 (8), 085001, 2020
242020
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
L Amichi, I Mouton, E Di Russo, V Boureau, F Barbier, A Dussaigne, ...
Journal of Applied Physics 127 (6), 2020
222020
Imaging, modeling and engineering of strain in gate-all-around nanosheet transitors
S Reboh, R Coquand, N Loubet, N Bernier, E Augendre, R Chao, J Li, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2019
222019
Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron …
D Cooper, V Boureau, A Even, F Barbier, A Dussaigne
Nanotechnology 31 (47), 475705, 2020
212020
In situ nucleation‐decoupled and site‐specific incorporation of Å‐scale pores in graphene via epoxidation
S Huang, LF Villalobos, S Li, MT Vahdat, HY Chi, KJ Hsu, L Bondaz, ...
Advanced Materials 34 (51), 2206627, 2022
192022
Bottom-up synthesis of graphene films hosting atom-thick molecular-sieving apertures
LF Villalobos, C Van Goethem, KJ Hsu, S Li, M Moradi, K Zhao, ...
Proceedings of the National Academy of Sciences 118 (37), e2022201118, 2021
182021
Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography
L Amichi, I Mouton, V Boureau, E Di Russo, P Vennegues, P De Mierry, ...
Nanotechnology 31 (4), 045702, 2019
172019
Highly spatially resolved mapping of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography
V Boureau, D Cooper
Journal of Applied Physics 128 (15), 2020
162020
Strain/composition interplay in thin SiGe layers on insulator processed by Ge condensation
V Boureau, D Benoit, B Warot, M Hÿtch, A Claverie
Materials Science in Semiconductor Processing 42, 251-254, 2016
152016
Quantitative Mapping of the Charge Density in a Monolayer of MoS2 at Atomic Resolution by Off-Axis Electron Holography
V Boureau, B Sklenard, R McLeod, D Ovchinnikov, D Dumcenco, A Kis, ...
ACS nano 14 (1), 524-530, 2019
142019
Lattice contraction due to boron doping in silicon
V Boureau, JM Hartmann, A Claverie
Materials Science in Semiconductor Processing 87, 65-68, 2018
142018
Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).
D Cooper, L Bruas, M Bryan, V Boureau
Micron 179, 103594, 2024
112024
Hemoglobin-stabilized gold nanoclusters displaying oxygen transport ability, self-antioxidation, auto-fluorescence properties and long-term storage potential
X Cun, MMT Jansman, X Liu, V Boureau, PW Thulstrup, L Hosta-Rigau
RSC advances 13 (23), 15540-15553, 2023
102023
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Artikler 1–20