| Microscopic thickness determination of thin graphite films formed on from quantized oscillation in reflectivity of low-energy electrons H Hibino, H Kageshima, F Maeda, M Nagase, Y Kobayashi, H Yamaguchi Physical Review B—Condensed Matter and Materials Physics 77 (7), 075413, 2008 | 482 | 2008 |
| Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy H Hibino, H Kageshima, M Kotsugi, F Maeda, FZ Guo, Y Watanabe Physical Review B—Condensed Matter and Materials Physics 79 (12), 125437, 2009 | 316 | 2009 |
| First-Principles Study of Oxide Growth on Si(100) Surfaces and at /Si(100) Interfaces H Kageshima, K Shiraishi Physical Review Letters 81 (26), 5936, 1998 | 296 | 1998 |
| Momentum-matrix-element calculation using pseudopotentials H Kageshima, K Shiraishi Physical Review B 56 (23), 14985, 1997 | 212 | 1997 |
| Universal theory of Si oxidation rate and importance of interfacial Si emission H Kageshima, K Shiraishi, M Uematsu Japanese journal of applied physics 38 (9A), L971, 1999 | 205 | 1999 |
| First-principles theory of scanning tunneling microscopy M Tsukada, K Kobayashi, N Isshiki, H Kageshima Surface Science Reports 13 (8), 267-304, 1991 | 183 | 1991 |
| Epitaxial few-layer graphene: towards single crystal growth H Hibino, H Kageshima, M Nagase Journal of Physics D: Applied Physics 43 (37), 374005, 2010 | 165 | 2010 |
| Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt CM Orofeo, S Suzuki, H Kageshima, H Hibino Nano Research 6, 335-347, 2013 | 139 | 2013 |
| Carrier transport mechanism in graphene on SiC (0001) S Tanabe, Y Sekine, H Kageshima, M Nagase, H Hibino Physical Review B—Condensed Matter and Materials Physics 84 (11), 115458, 2011 | 136 | 2011 |
| Stacking domains of epitaxial few-layer graphene on SiC (0001) H Hibino, S Mizuno, H Kageshima, M Nagase, H Yamaguchi Physical Review B—Condensed Matter and Materials Physics 80 (8), 085406, 2009 | 120 | 2009 |
| Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation S Horiguchi, M Nagase, K Shiraishi, H Kageshima, Y Takahashi, ... Japanese Journal of Applied Physics 40 (1A), L29, 2001 | 114 | 2001 |
| Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions T Takahashi, S Fukatsu, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ... Journal of applied physics 93 (6), 3674-3676, 2003 | 110 | 2003 |
| Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si H Kageshima, A Taguchi, K Wada Applied Physics Letters 76 (25), 3718-3720, 2000 | 108 | 2000 |
| Scanning-tunneling-microscopy observation of thermal oxide growth on Si (111) 7× 7 surfaces Y Ono, M Tabe, H Kageshima Physical Review B 48 (19), 14291, 1993 | 97 | 1993 |
| Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices S Tanabe, Y Sekine, H Kageshima, M Nagase, H Hibino Applied physics express 3 (7), 075102, 2010 | 89 | 2010 |
| Effect of the interface on self-diffusion of Si in semiconductor-grade S Fukatsu, T Takahashi, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ... Applied physics letters 83 (19), 3897-3899, 2003 | 89 | 2003 |
| Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity M Uematsu, H Kageshima, Y Takahashi, S Fukatsu, KM Itoh, K Shiraishi, ... Applied physics letters 84 (6), 876-878, 2004 | 85 | 2004 |
| Unified simulation of silicon oxidation based on the interfacial silicon emission model M Uematsu, H Kageshima, K Shiraishi Japanese Journal of Applied Physics 39 (7B), L699, 2000 | 83 | 2000 |
| Growth and electronic transport properties of epitaxial graphene on SiC H Hibino, S Tanabe, S Mizuno, H Kageshima Journal of physics D: Applied physics 45 (15), 154008, 2012 | 81 | 2012 |
| Theoretical study of epitaxial graphene growth on SiC (0001) surfaces H Kageshima, H Hibino, M Nagase, H Yamaguchi Applied physics express 2 (6), 065502, 2009 | 81 | 2009 |
