| Effects of deposition conditions on the ferroelectric properties of (Al1− xScx) N thin films S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ... Journal of Applied Physics 128 (11), 2020 | 200 | 2020 |
| Thickness scaling of (Al0. 8Sc0. 2) N films with remanent polarization beyond 100 μC cm− 2 around 10 nm in thickness R Mizutani, S Yasuoka, T Shiraishi, T Shimizu, M Uehara, H Yamada, ... Applied Physics Express 14 (10), 105501, 2021 | 48 | 2021 |
| Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy S Yasuoka, R Mizutani, R Ota, T Shiraishi, T Shimizu, M Uehara, ... ACS Applied Electronic Materials 4 (11), 5165-5170, 2022 | 27 | 2022 |
| Demonstration of ferroelectricity in ScGaN thin film using sputtering method M Uehara, R Mizutani, S Yasuoka, T Shiraishi, T Shimizu, H Yamada, ... Applied Physics Letters 119 (17), 2021 | 26 | 2021 |
| Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN M Uehara, R Mizutani, S Yasuoka, T Shimizu, H Yamada, M Akiyama, ... Applied Physics Express 15 (8), 081003, 2022 | 21 | 2022 |
| Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al, Sc) N films S Yasuoka, R Mizutani, R Ota, T Shiraishi, T Shimizu, S Yasui, Y Ehara, ... Journal of the Ceramic Society of Japan 130 (7), 436-441, 2022 | 19 | 2022 |
| Impact of Deposition Temperature on Crystal Structure and Ferroelectric Properties of (Al1−x Sc x )N Films Prepared by Sputtering Method S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ... physica status solidi (a) 218 (17), 2100302, 2021 | 19 | 2021 |
| Invariant polarization switching kinetics in an (Al0. 8Sc0. 2) N film with frequency and temperature S Yasuoka, R Mizutani, R Ota, T Shiraishi, T Shimizu, K Okamoto, ... Applied Physics Letters 123 (20), 2023 | 7 | 2023 |
| Scalable ferroelectricity of 20 nm-thick (Al0. 8Sc0. 2) N thin films sandwiched between TiN electrodes R Ota, S Yasuoka, R Mizutani, T Shiraishi, K Okamoto, K Kakushima, ... Journal of Applied Physics 134 (21), 2023 | 1 | 2023 |
| High stability of the ferroelectricity against hydrogen gas in (Al, Sc) N thin films N Sun, K Okamoto, S Yasuoka, S Doko, N Matsui, T Irisawa, K Tsunekawa, ... Applied Physics Letters 125 (3), 2024 | | 2024 |
| The ferroelectric and piezoelectric properties of (Hf1− x Ce x) O2 films on indium tin oxide/Pt/TiO x/SiO2/(100) Si substrates obtained using a no-heating radio-frequency … N Chaya, K Okamoto, K Hirai, S Yasuoka, Y Inoue, W Yamaoka, ... Japanese Journal of Applied Physics 63 (4), 04SP83, 2024 | | 2024 |
| Probing of Polarization Reversal in Ferroelectric (Al, Sc) N Films Using Single‐and Tri‐Layered Structures With Different Sc/(Al+ Sc) Ratio S Yasuoka, T Shimizu, K Okamoto, N Sun, S Doko, N Matsui, T Irisawa, ... Advanced Materials Interfaces, 2400627, 2024 | | 2024 |
| Ferroelectric thin film, electronic element using same, and method for manufacturing ferroelectric thin film M Uehara, M Akiyama, H Yamada, H Funakubo, T Shimizu, S Yasuoka US Patent App. 17/757,932, 2023 | | 2023 |
| Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering S Kageyama, K Okamoto, S Yasuoka, K Ide, K Hanzawa, Y Hiranaga, ... Advanced Electronic Materials, 2400880, 0 | | |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0202063 N Sun, K Okamoto, S Yasuoka, S Doko, N Matsui, T Irisawa, K Tsunekawa, ... | | |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0068059 M Uehara, R Mizutani, S Yasuoka, T Shiraishi, T Shimizu, H Yamada, ... | | |
