| Nanometre-scale electronics with III–V compound semiconductors JA Del Alamo Nature 479 (7373), 317-323, 2011 | 2025 | 2011 |
| Carrier-induced change in refractive index of InP, GaAs and InGaAsP BR Bennett, RA Soref, JA Del Alamo IEEE Journal of Quantum Electronics 26 (1), 113-122, 1990 | 1331 | 1990 |
| GaN HEMT reliability JA del Alamo, J Joh Microelectronics reliability 49 (9-11), 1200-1206, 2009 | 592 | 2009 |
| The ilab shared architecture: A web services infrastructure to build communities of internet accessible laboratories VJ Harward, JA Del Alamo, SR Lerman, PH Bailey, J Carpenter, ... Proceedings of the IEEE 96 (6), 931-950, 2008 | 544 | 2008 |
| A current-transient methodology for trap analysis for GaN high electron mobility transistors J Joh, JA Del Alamo IEEE Transactions on Electron Devices 58 (1), 132-140, 2010 | 498 | 2010 |
| Critical voltage for electrical degradation of GaN high-electron mobility transistors J Joh, JA Del Alamo IEEE Electron Device Letters 29 (4), 287-289, 2008 | 402 | 2008 |
| III–V compound semiconductor transistors—from planar to nanowire structures H Riel, LE Wernersson, M Hong, JA Del Alamo Mrs Bulletin 39 (8), 668-677, 2014 | 276 | 2014 |
| Mechanisms for electrical degradation of GaN high-electron mobility transistors J Joh, JA del Alamo 2006 International Electron Devices Meeting, 1-4, 2006 | 272 | 2006 |
| Quantum field‐effect directional coupler JA del Alamo, CC Eugster Applied physics letters 56 (1), 78-80, 1990 | 254 | 1990 |
| 50 Per cent more output power from an albedo-collecting flat panel using bifacial solar cells A Cuevas, A Luque, J Eguren, J del Alamo Solar Energy 29 (5), 419-420, 1982 | 250 | 1982 |
| 30-nm InAs PHEMTs With fT = 644 GHz and fmax = 681 GHz DH Kim, JA Del Alamo Institute of Electrical and Electronics Engineers, 2010 | 234 | 2010 |
| Operating limits of Al-alloyed high-low junctions for BSF solar cells J Del Alamo, J Eguren, A Luque Solid-State Electronics 24 (5), 415-420, 1981 | 222 | 1981 |
| Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors P Makaram, J Joh, JA del Alamo, T Palacios, CV Thompson Applied Physics Letters 96 (23), 2010 | 220 | 2010 |
| 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz DH Kim, JA Del Alamo IEEE Electron Device Letters 29 (8), 830-833, 2008 | 217 | 2008 |
| TEM observation of crack-and pit-shaped defects in electrically degraded GaN HEMTs U Chowdhury, JL Jimenez, C Lee, E Beam, P Saunier, T Balistreri, ... IEEE Electron Device Letters 29 (10), 1098-1100, 2008 | 207 | 2008 |
| Measurement of channel temperature in GaN high-electron mobility transistors J Joh, JA Del Alamo, U Chowdhury, TM Chou, HQ Tserng, JL Jimenez IEEE Transactions on Electron Devices 56 (12), 2895-2901, 2009 | 203 | 2009 |
| A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs SR Bahl, JA Del Alamo IEEE Transactions on Electron devices 40 (8), 1558-1560, 1993 | 198 | 1993 |
| Band‐gap narrowing in heavily doped silicon: A comparison of optical and electrical data J Wagner, JA del Alamo Journal of applied physics 63 (2), 425-429, 1988 | 195 | 1988 |
| Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon J Del Alamo, S Swirhun, RM Swanson 1985 International Electron Devices Meeting, 290-293, 1985 | 194 | 1985 |
| Measuring and modeling minority carrier transport in heavily doped silicon J Del Alamo, S Swirhun, RM Swanson Solid-State Electronics 28 (1-2), 47-54, 1985 | 185 | 1985 |
Dae-Hyun KIMAssociate Professor, College of IT Engineering, School of Electronics Engineering, SemiconductorVerificeret mail på ee.knu.ac.kr