| Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys D Jena, S Heikman, D Green, D Buttari, R Coffie, H Xing, S Keller, ... Applied physics letters 81 (23), 4395-4397, 2002 | 220 | 2002 |
| Memory effect and redistribution of Mg into sequentially regrown GaN layer by metalorganic chemical vapor deposition H Xing, DS Green, H Yu, T Mates, P Kozodoy, S Keller, SP DenBaars, ... Japanese journal of applied physics 42 (1R), 50, 2003 | 210 | 2003 |
| Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel Journal of Applied physics 98 (5), 2005 | 203 | 2005 |
| AlGaN/GaN HFET reliability RJ Trew, DS Green, JB Shealy IEEE Microwave magazine 10 (4), 116-127, 2009 | 183 | 2009 |
| Gallium nitride based transistors H Xing, S Keller, YF Wu, L McCarthy, IP Smorchkova, D Buttari, R Coffie, ... Journal of Physics: Condensed Matter 13 (32), 7139, 2001 | 173 | 2001 |
| Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers ZQ Fang, B Claflin, DC Look, DS Green, R Vetury Journal of Applied Physics 108 (6), 2010 | 144 | 2010 |
| Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE S Rajan, P Waltereit, C Poblenz, SJ Heikman, DS Green, JS Speck, ... IEEE Electron Device Letters 25 (5), 247-249, 2004 | 132 | 2004 |
| Carbon doping of GaN with in radio-frequency plasma-assisted molecular beam epitaxy DS Green, UK Mishra, JS Speck Journal of applied physics 95 (12), 8456-8462, 2004 | 112 | 2004 |
| Micro-Raman thermometry in the presence of complex stresses in GaN devices T Beechem, A Christensen, S Graham, D Green Journal of Applied Physics 103 (12), 2008 | 108 | 2008 |
| High conductivity modulation doped AlGaN/GaN multiple channel heterostructures S Heikman, S Keller, DS Green, SP DenBaars, UK Mishra Journal of applied physics 94 (8), 5321-5325, 2003 | 106 | 2003 |
| A Revolution on the Horizon from DARPA: Heterogeneous Integration for Revolutionary Microwave\/Millimeter-Wave Circuits at DARPA: Progress and Future Directions DS Green, CL Dohrman, J Demmin, Y Zheng, TH Chang IEEE Microwave Magazine 18 (2), 44-59, 2017 | 76 | 2017 |
| Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications S Lee, R Vetury, JD Brown, SR Gibb, WZ Cai, J Sun, DS Green, J Shealy 2008 IEEE International Reliability Physics Symposium, 446-449, 2008 | 75 | 2008 |
| Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% P Waltereit, H Sato, C Poblenz, DS Green, JS Brown, M McLaurin, ... Applied physics letters 84 (15), 2748-2750, 2004 | 65 | 2004 |
| Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy A Armstrong, C Poblenz, DS Green, UK Mishra, JS Speck, SA Ringel Applied physics letters 88 (8), 2006 | 64 | 2006 |
| The growth of N-face GaN by MOCVD: effect of Mg, Si, and In PR Tavernier, T Margalith, J Williams, DS Green, S Keller, SP DenBaars, ... Journal of crystal growth 264 (1-3), 150-158, 2004 | 63 | 2004 |
| Polarity control during molecular beam epitaxy growth of Mg-doped GaN DS Green, E Haus, F Wu, L Chen, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 57 | 2003 |
| Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy T Beechem, A Christensen, DS Green, S Graham Journal of Applied Physics 106 (11), 2009 | 53 | 2009 |
| Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability DS Green, SR Gibb, B Hosse, R Vetury, DE Grider, JA Smart Journal of crystal growth 272 (1-4), 285-292, 2004 | 50 | 2004 |
| High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications R Vetury, Y Wei, DS Green, SR Gibb, TW Mercier, K Leverich, PM Garber, ... IEEE MTT-S International Microwave Symposium Digest, 2005., 487-490, 2005 | 43 | 2005 |
| Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes ZQ Fang, GC Farlow, B Claflin, DC Look, DS Green Journal of Applied Physics 105 (12), 2009 | 36 | 2009 |
Umesh MishraUCSBVerificeret mail på ece.ucsb.edu
