Artikler med krav om offentlig adgang - Arnab BhattacharyaFå flere oplysninger
Tilgængelige et sted: 18
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ...
IEEE Transactions on Electron Devices 60 (10), 3157-3165, 2013
Krav: Department of Science & Technology, India
A facile process for soak-and-peel delamination of CVD graphene from substrates using water
P Gupta, PD Dongare, S Grover, S Dubey, H Mamgain, A Bhattacharya, ...
Scientific reports 4 (1), 3882, 2014
Krav: Department of Science & Technology, India
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ...
Scientific Reports 6, 23708, 2016
Krav: US National Science Foundation
Recharging and rejuvenation of decontaminated N95 masks
E Hossain, S Bhadra, H Jain, S Das, A Bhattacharya, S Ghosh, D Levine
Physics of Fluids 32 (9), 093304, 2020
Krav: US National Science Foundation
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ...
Applied Physics Letters 101 (12), 121919, 2012
Krav: Council of Scientific and Industrial Research, India, Department of Science …
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes
S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ...
Advanced Functional Materials 21 (20), 3828-3835, 2011
Krav: Council of Scientific and Industrial Research, India
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
M Frentrup, N Hatui, T Wernicke, J Stellmach, A Bhattacharya, M Kneissl
Journal of Applied Physics 114 (21), 213509, 2013
Krav: German Research Foundation
MOVPE growth of semipolar () Al1− xInxN across the alloy composition range (0≤ x≤ 0.55)
N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ...
Journal of Crystal Growth, 2014
Krav: German Research Foundation
Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes
S De, D Kumar Das, A Layek, A Raja, M Kumar Singh, A Bhattacharya, ...
Applied Physics Letters 99 (25), 251911-251911-4, 2011
Krav: Council of Scientific and Industrial Research, India
Comparison of GaN nanowires grown on c-, r-and m-plane sapphire substrates
CB Maliakkal, AA Rahman, N Hatui, BA Chalke, RD Bapat, ...
Journal of Crystal Growth, 2016
Krav: Department of Science & Technology, India
Applying heat and humidity using stove boiled water for decontamination of N95 respirators in low resource settings
MP Siddharth Doshi, Samhita P. Banavar, Eliott Flaum, Surendra Kulkarni ...
PLoS ONE 16 (9), e0255338, 2021
Krav: US National Science Foundation, Gordon and Betty Moore Foundation
Facile synthesis of WS 2 nanotubes by sulfurization of tungsten thin films: formation mechanism, structural and optical properties
E Hossain, AA Rahman, R Bapat, JB Parmar, AP Shah, A Arora, ...
Nanoscale, 2018
Krav: German Research Foundation
Probing in-plane anisotropy in fewlayer ReS2 using low frequency noise measurement
R Mitra, B Jariwala, A Bhattacharya, A Das
Nanotechnology, 2018
Krav: Department of Science & Technology, India
Doping controlled Fano resonance in bilayer 1T'-ReS 2: Raman experiments and first-principles theoretical analysis
S Das, S Prasad, B Chakraborty, B Jariwala, S Shradha, VSM Dharmaraj, ...
Nanoscale, 2021
Krav: US Department of Defense, Department of Science & Technology, India
Evaluation of the effects of repeated disinfection on medical exam gloves: Part 2. Changes in mechanical properties
RN Phalen, J Patterson, J Cuadros Olave, SA Mansfield, JS Shless, ...
Journal of occupational and environmental hygiene, 1-11, 2021
Krav: US National Science Foundation, US Department of Energy
Global Collaboration on a UV-C Cabinet to Decontaminate and Reuse N95 Respirators in Low-and Middle-Income Environments
N Starr, N Gebeyehu, ASL Gomes, E Rosas, TN Chen, D Assefa, J Shless, ...
NEJM Catalyst Innovations in Care Delivery 3 (3), CAT. 21.0439, 2022
Krav: US National Institutes of Health
Physical integrity of medical exam gloves with repeated applications of disinfecting agents: evidence for extended use
JS Shless, YS Crider, HO Pitchik, AS Qazi, A Styczynski, R LeMesurier, ...
medRxiv, 2021
Krav: US National Institutes of Health
Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation
T Sreenidhi, AA Rahman, A Bhattacharya, A DasGupta, N DasGupta
MRS Online Proceedings Library (OPL) 1635, 3-8, 2014
Krav: Department of Science & Technology, India
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