Artikler med krav om offentlig adgang - Prof. Dr. Suzan S. Fouad - Former DeanFå flere oplysninger
Ikke tilgængelige nogen steder: 6
Structure, Ionic Conductivity, and Dielectric Properties of Li-Rich Garnet-type Li5+2xLa3Ta2–xSmxO12 (0 ≤ x ≤ 0.55) and Their Chemical Stability
DM Abdel-Basset, S Mulmi, MS El-Bana, SS Fouad, V Thangadurai
Inorganic chemistry 56 (15), 8865-8877, 2017
Krav: Natural Sciences and Engineering Research Council of Canada
Enhancement of dispersion optical parameters of Al2O3/ZnO thin films fabricated by ALD
H Zaka, SS Fouad, B Parditka, AE Bekheet, HE Atyia, M Medhat, Z Erdélyi
Solar Energy 205, 79-87, 2020
Krav: National Office for Research, Development and Innovation, Hungary
Synthesis and characterization of novel Li-stuffed garnet-like Li 5+ 2x La 3 Ta 2− x Gd x O 12 (0≤ x≤ 0.55): structure–property relationships
DMA Basset, S Mulmi, MS El-Bana, SS Fouad, V Thangadurai
Dalton Transactions 46 (3), 933-946, 2017
Krav: Natural Sciences and Engineering Research Council of Canada
Multilayer stack structural designing of titania and zinc white using atomic layer deposition (ALD) technique and study of thermally governed dielectric dispersion and …
N Mehta, SS Fouad, E Baradacs, B Parditka, HE Atyia, SK Pal, Z Erdelyi
Journal of Materials Science: Materials in Electronics 34 (8), 708, 2023
Krav: National Office for Research, Development and Innovation, Hungary
Phenomenology of electrical switching behavior of SeTeSnCd thin films for memory applications
SS Fouad, HE Atyia, AE Bekheet, A Kumar, N Mehta
Journal of Non-Crystalline Solids 571, 121025, 2021
Krav: Council of Scientific and Industrial Research, India
Advances for enhancing the electrical properties and microhardness activity of ZnO/Cu/ZnO thin films prepared by ALD
SS Fouad, LI Soliman, E Baradács, ME Sayed, B Parditka, NF Osman, ...
Journal of Materials Science 58 (15), 6632-6642, 2023
Krav: National Office for Research, Development and Innovation, Hungary
Tilgængelige et sted: 10
Investigation of optical band-gap and related optical properties in thin-films of Ge containing Se-Te-Sn alloys
SK Pal, N Mehta, HE Atyia, SS Fouad
Journal of Non-Crystalline Solids 551, 120399, 2021
Krav: Council of Scientific and Industrial Research, India
Bilayer number driven changes in polarizability and optical property in ZnO/TiO2 nanocomposite films prepared by ALD
SS Fouad, B Parditka, M Nabil, E Baradács, S Negm, HE Atyia, Z Erdélyi
Optik 233, 166617, 2021
Krav: National Office for Research, Development and Innovation, Hungary
Dielectric behavior of amorphous thin films of Se–Te–Sn-Ge system
SK Pal, N Mehta, SS Fouad, HE Atyia
Solid State Sciences 104, 106289, 2020
Krav: Council of Scientific and Industrial Research, India
Effect of Cu interlayer on opto-electrical parameters of ZnO thin films
SS Fouad, B Parditka, M Nabil, E Baradács, S Negm, Z Erdélyi
Journal of Materials Science: Materials in Electronics 33 (26), 20594-20603, 2022
Krav: National Office for Research, Development and Innovation, Hungary
Study of linear and non-linear optoelectronic properties of thermally grown thin films of amorphous selenium doped with graphene, multiwalled carbon nanotubes, and silver …
SK Yadav, HE Atyia, SS Fouad, A Sharma, N Mehta
Diamond and Related Materials 136, 110030, 2023
Krav: Council of Scientific and Industrial Research, India
Assessing, surface morphology, optical, and electrical performance of ZnO thin film using ALD technique
SS Fouad, M Nabil, B Parditka, AM Ismail, E Baradács, HE Atyia, Z Erdélyi
Journal of Nanoparticle Research 25 (8), 172, 2023
Krav: National Office for Research, Development and Innovation, Hungary
Critical analysis of the different glass stability criteria in chalcogenide glasses
S Fouad, HE Atyia, N Mehta
boletín de la sociedad española de cerámica y vidrio 60 (6), 369-379, 2021
Krav: Council of Scientific and Industrial Research, India
Perspectives of dielectric and AC conductivity behavior of MWCNT and graphene-doped amorphous Selenium thin films
SK Yadav, SS Fouad, HE Atyia, N Mehta
Journal of Materials Science: Materials in Electronics 35 (2), 173, 2024
Krav: Council of Scientific and Industrial Research, India
Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature
H Zaka, SS Shenouda, SS Fouad, M Medhat, GL Katona, A Csik, ...
Microelectronics Reliability 56, 85-92, 2016
Krav: Hungarian Scientific Research Fund
A comparative estimation on the property’s performance and applications of ZnO thin fabricated via ALD
SS Fouad, M Nabil, B Parditka, AM Ismail, HE Atyia, E Baradács, Z Erdélyi
Krav: National Office for Research, Development and Innovation, Hungary
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