| Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016 | 246 | 2016 |
| Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 245 | 2015 |
| Progress in contact, doping and mobility engineering of MoS2: An atomically thin 2D semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018 | 167 | 2018 |
| Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 163118, 2013 | 112 | 2013 |
| Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015 | 96 | 2015 |
| A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee Applied Physics Letters 109 (22), 223501, 2016 | 80 | 2016 |
| Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 K Chen, R Ghosh, X Meng, A Roy, JS Kim, F He, SC Mason, X Xu, JF Lin, ... npj 2D Materials and Applications 1 (1), 15, 2017 | 73 | 2017 |
| Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories P Zhuang, W Lin, J Ahn, M Catalano, H Chou, A Roy, M Quevedo‐Lopez, ... Advanced Electronic Materials 6 (1), 1900979, 2020 | 64 | 2020 |
| Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS2 Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ... Advanced Materials 32 (22), 1908311, 2020 | 58 | 2020 |
| Ultra-fast switching memristors based on two-dimensional materials SS Teja Nibhanupudi, A Roy, D Veksler, M Coupin, KC Matthews, ... Nature Communications 15 (1), 2334, 2024 | 56 | 2024 |
| Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018 | 46 | 2018 |
| Characteristics and mechanism study of cerium oxide based random access memories CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee Applied Physics Letters 106 (17), 173108, 2015 | 45 | 2015 |
| Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 223111, 2014 | 43 | 2014 |
| Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides K Chen, A Roy, A Rai, HCP Movva, X Meng, F He, SK Banerjee, Y Wang APL Materials 6 (5), 056103, 2018 | 37 | 2018 |
| Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies. S Chowdhury, A Roy, I Bodemann, SK Banerjee ACS Applied Materials & Interfaces 12 (13), 15885-15892, 2020 | 34 | 2020 |
| Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies S Chowdhury, A Roy, I Bodemann, SK Banerjee ACS Applied Materials & Interfaces 12 (13), 15885-15892, 2020 | 34 | 2020 |
| Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy T Pramanik, A Roy, R Dey, A Rai, S Guchhait, HCP Movva, CC Hsieh, ... Journal of Magnetism and Magnetic Materials 437, 72-77, 2017 | 32 | 2017 |
| Tailored MoS2 nanorods: a simple microwave assisted synthesis S Reshmi, MV Akshaya, B Satpati, A Roy, PK Basu, K Bhattacharjee Materials Research Express 4 (11), 115012, 2017 | 30 | 2017 |
| Interfacial-oxygen-vacancy mediated doping of MoS2by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015 | 29 | 2015 |
| Interfacial-oxygen-vacancy mediated doping of MoS2by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015 | 29 | 2015 |
Amritesh RaiFront End Process Integration Engineer @ Intel ▪️ UT Austin ▪️ Ohio StateVerificeret mail på utexas.edu