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Dr. Nagaboopathy Mohan
Dr. Nagaboopathy Mohan
Department of Science and Technology
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Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV optoelectronics
DNN Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush, Nagaboopathy ...
Applied Physics letters 112 (2), 021105, 2018
512018
Discovery of carbon nanotubes in sixth century BC potteries from Keeladi, India
M Kokarneswaran, P Selvaraj, T Ashokan, S Perumal, P Sellappan, ...
Scientific reports 10 (1), 19786, 2020
422020
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering
SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ...
IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019
402019
An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si
H Chandrasekar, N Mohan, A Bardhan, KN Bhat, N Bhat, N Ravishankar, ...
Applied Physics Letters 103 (21), 2013
312013
Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs
N Remesh, N Mohan, S Raghavan, R Muralidharan, DN Nath
IEEE Transactions on Electron Devices, 2020
292020
Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
N Mohan, M Manikant, R Soman, S Raghavan
Journal of Applied Physics 118 (13), 2015
212015
Self-assembled gold nanofilms as a simple, recoverable and recyclable catalyst for nitro-reduction
M Mohan, N Mohan, DK Chand
Journal of Materials Chemistry A 3 (42), 21167-21177, 2015
192015
Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ...
2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017
182017
Vertical current transport in AlGaN/GaN HEMTs on silicon: Experimental investigation and analytical model
N Remesh, N Mohan, S Kumar, S Prabhu, I Guiney, CJ Humphreys, ...
IEEE Transactions on Electron Devices 66 (1), 613-618, 2018
172018
The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth
A Bardhan, N Mohan, H Chandrasekar, P Ghosh, DV Sridhara Rao, ...
Journal of Applied Physics 123 (16), 2018
152018
On the ESD behavior of AlGaN/GaN Schottky diodes and trap assisted failure mechanism
B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, ...
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017
152017
Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth
M Nagaboopathy, N Ravishankar, S Raghavan
Applied Physics Letters 103 (4), 2013
112013
Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
R Soman, N Mohan, H Chandrasekar, N Bhat, S Raghavan
Journal of Applied Physics 124 (24), 245104, 2018
102018
Single-pulse chemical shock tube for ignition delay measurements
M Nagaboopathy, C Vijayanand, G Hegde, KPJ Reddy, E Arunan
Current Science, 78-82, 2008
102008
Wafer-scale epitaxial germanium (100),(111),(110) films on silicon using liquid phase crystallization
S Chaurasia, N Mohan, S Raghavan, S Avasthi
AIP Advances 8 (7), 2018
72018
Curvature management in buffer layer for device quality GaN growth on Si (111)
A Bardhan, N Mohan, R Soman, Manikant, S Raghavan
IETE Technical Review 33 (1), 82-87, 2016
72016
Structure and morphology studies of chromium film at elevated temperature in hypersonic environment
GM Hegde, V Kulkarni, M Nagaboopathy, KPJ Reddy
Bulletin of Materials Science 35, 341-345, 2012
62012
A study on various modes of presentation of gastrointestinal tuberculosis at emergency, its management and outcomes
NK Mohan, D Ramesh, KG Reddy
Journal of Evidence Based Medicine and Healthcare 3, 537-47, 2016
52016
Comparative study of various methods of treatment in relation to post procedural complications of haemorrhoidal disease
NK Mohan, D Ramesh, MK Raufuddin
JEBMH 3 (11), 314-20, 2016
52016
Giant epidermal cyst of the gluteal region
G Sabhnani, NK Mohan, G Reddy, MK Raufuddin
Int Surg J 3 (2), 954-5, 2016
42016
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