Følg
Jiwon Chang
Jiwon Chang
Verificeret mail på yonsei.ac.kr
Titel
Citeret af
Citeret af
År
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
2452015
Tunnelling-based ternary metal–oxide–semiconductor technology
JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ...
Nature Electronics 2 (7), 307-312, 2019
1212019
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
1112014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
1112014
Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure
A Hwang, M Park, Y Park, Y Shim, S Youn, CH Lee, HB Jeong, HY Jeong, ...
Science advances 7 (51), eabj2521, 2021
902021
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 141603, 2014
862014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
862014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
862014
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 223509, 2013
722013
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
652015
Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors
CH Lee, Y Park, S Youn, MJ Yeom, HS Kum, J Chang, J Heo, G Yoo
Advanced Functional Materials, 2107992, 2021
602021
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
602012
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
602012
Theoretical study of phosphorene tunneling field effect transistors
J Chang, C Hobbs
Applied Physics Letters 106 (8), 083509, 2015
532015
A 2D material-based floating gate device with linear synaptic weight update
E Park, M Kim, TS Kim, IS Kim, J Park, J Kim, YJ Jeong, S Lee, I Kim, ...
Nanoscale 12 (48), 24503-24509, 2020
492020
Analytical model of short-channel double-gate JFETs
J Chang, AK Kapoor, LF Register, SK Banerjee
IEEE transactions on electron devices 57 (8), 1846-1855, 2010
462010
Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition
VA Cao, M Kim, W Hu, S Lee, S Youn, J Chang, HS Chang, J Nah
ACS nano, 2021
452021
Density functional study of ternary topological insulator thin films
J Chang, LF Register, SK Banerjee, B Sahu
Physical Review B 83 (23), 235108, 2011
452011
Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
T Das, E Yang, JE Seo, JH Kim, E Park, M Kim, D Seo, JY Kwak, J Chang
ACS Applied Materials & Interfaces, 2021
412021
Topological insulator-based field-effect transistor
SK Banerjee, IILF Register, A MacDonald, BR Sahu, P Jadaun, J Chang
US Patent 8,629,427, 2014
322014
Systemet kan ikke foretage handlingen nu. Prøv igen senere.
Artikler 1–20