| Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014 | 816 | 2014 |
| Forming a type I heterostructure in a group IV semiconductor CO Chui, P Majhi, W Tsai, JT Kavalieros US Patent 7,435,987, 2008 | 526 | 2008 |
| Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy H Nohira, W Tsai, W Besling, E Young, J Pétry, T Conard, W Vandervorst, ... Journal of non-crystalline solids 303 (1), 83-87, 2002 | 263 | 2002 |
| Germanium n-type shallow junction activation dependences CO Chui, L Kulig, J Moran, W Tsai, KC Saraswat Applied Physics Letters 87 (9), 2005 | 241 | 2005 |
| Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ... Applied physics letters 88 (2), 2006 | 237 | 2006 |
| Ultimate scaling of CMOS logic devices with Ge and III–V materials M Heyns, W Tsai Mrs bulletin 34 (7), 485-492, 2009 | 233 | 2009 |
| High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕ Ga2O3 (Gd2O3) as gate dielectrics TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ... Applied Physics Letters 93 (3), 2008 | 175 | 2008 |
| Atomic layer deposition of hafnium oxide on germanium substrates A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ... Journal of applied physics 97 (6), 2005 | 139 | 2005 |
| InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition N Goel, P Majhi, CO Chui, W Tsai, D Choi, JS Harris Applied physics letters 89 (16), 2006 | 133 | 2006 |
| High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ... Materials Science and Engineering: B 135 (3), 272-276, 2006 | 100 | 2006 |
| Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment NV Nguyen, OA Kirillov, W Jiang, W Wang, JS Suehle, PD Ye, Y Xuan, ... Applied Physics Letters 93 (8), 2008 | 91 | 2008 |
| High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 89 | 2014 |
| The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ... Applied physics letters 94 (15), 2009 | 88 | 2009 |
| Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/and HfO/sub 2 CH Lu, GMT Wong, MD Deal, W Tsai, P Majhi, CO Chui, MR Visokay, ... IEEE electron device letters 26 (7), 445-447, 2005 | 86 | 2005 |
| Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack A Ritenour, A Khakifirooz, DA Antoniadis, RZ Lei, W Tsai, A Dimoulas, ... Applied physics letters 88 (13), 2006 | 85 | 2006 |
| In0. 53Ga0. 47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness … S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ... Applied Physics Letters 92 (22), 2008 | 84 | 2008 |
| Hot filament chemical vapor deposition reactor D Garg, W Tsai, RL Iampietro, FM Kimock, CM Kelly US Patent 5,160,544, 1992 | 83 | 1992 |
| Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition W Tsai, RJ Carter, H Nohira, M Caymax, T Conard, V Cosnier, S DeGendt, ... Microelectronic Engineering 65 (3), 259-272, 2003 | 81 | 2003 |
| Determination of interface energy band diagram between (100) Si and mixed Al–Hf oxides using internal electron photoemission VV Afanas’ ev, A Stesmans, W Tsai Applied physics letters 82 (2), 245-247, 2003 | 79 | 2003 |
| High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric N Goel, P Majhi, W Tsai, M Warusawithana, DG Schlom, MB Santos, ... Applied Physics Letters 91 (9), 2007 | 76 | 2007 |
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