| 1-kV vertical Ga2O3 field-plated Schottky barrier diodes K Konishi, K Goto, H Murakami, Y Kumagai, A Kuramata, S Yamakoshi, ... Applied Physics Letters 110 (10), 2017 | 584 | 2017 |
| Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide … M Higashiwaki, K Konishi, K Sasaki, K Goto, K Nomura, QT Thieu, ... Applied Physics Letters 108 (13), 2016 | 358 | 2016 |
| Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties K Goto, K Konishi, H Murakami, Y Kumagai, B Monemar, M Higashiwaki, ... Thin Solid Films 666, 182-184, 2018 | 211 | 2018 |
| Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ... IEEE Electron Device Letters 40 (9), 1487-1490, 2019 | 197 | 2019 |
| Large conduction band offset at SiO2/β‐Ga2O3 heterojunction determined by X‐ray photoelectron spectroscopy K Konishi, T Kamimura, MH Wong, K Sasaki, A Kuramata, S Yamakoshi, ... physica status solidi (b) 253 (4), 623-625, 2016 | 76 | 2016 |
| Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface CH Lin, N Hatta, K Konishi, S Watanabe, A Kuramata, K Yagi, ... Applied Physics Letters 114 (3), 2019 | 64 | 2019 |
| Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy K Konishi, K Goto, R Togashi, H Murakami, M Higashiwaki, A Kuramata, ... Journal of Crystal Growth 492, 39-44, 2018 | 35 | 2018 |
| Preparation of 2-in.-diameter (001) β-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy QT Thieu, D Wakimoto, Y Koishikawa, K Sasaki, K Goto, K Konishi, ... Japanese Journal of Applied Physics 56 (11), 110310, 2017 | 32 | 2017 |
| Characterizing the electron transport properties of a single< 110> InAs nanowire Z Cui, R Perumal, T Ishikura, K Konishi, K Yoh, J Motohisa Applied Physics Express 7 (8), 085001, 2014 | 15 | 2014 |
| Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier T Ishikura, LK Liefeith, Z Cui, K Konishi, K Yoh, T Uemura Applied Physics Express 7 (7), 073001, 2014 | 10 | 2014 |
| Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide K Konishi, K Yoh Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2792-2795, 2010 | 9 | 2010 |
| Dependence of thermal stability of GaN on substrate orientation and off-cut K Yoshida, S Yamanobe, K Konishi, S Takashima, M Edo, B Monemar, ... Japanese Journal of Applied Physics 58 (SC), SCCD17, 2019 | 5 | 2019 |
| Experimental determination of critical thickness limitations of (010) β-(AlxGa1− x) 2O3 heteroepitaxial films JS Lundh, K Huynh, M Liao, W Olsen, K Pan, K Sasaki, K Konishi, ... Applied Physics Letters 123 (22), 2023 | 4 | 2023 |
| Spin-injection into epitaxial graphene on silicon carbide K Konishi, Z Cui, T Hiraki, K Yoh Journal of crystal growth 378, 385-387, 2013 | 4 | 2013 |
| An InAs nanowire spin transistor with subthreshold slope of 20mV/dec K Yoh, Z Cui, K Konishi, M Ohno, K Blekker, W Prost, FJ Tegude, ... 70th Device Research Conference, 79-80, 2012 | 4 | 2012 |
| AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices JS Lundh, HN Masten, K Sasaki, AG Jacobs, Z Cheng, J Spencer, L Chen, ... 2022 Device Research Conference (DRC), 1-2, 2022 | 3 | 2022 |
| Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV K Konishi, K Goto, QT Thieu, R Togashi, H Murakami, Y Kumagai, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 3 | 2016 |
| Proposal of graphene bandgap control by hexagonal network formation L Zou, K Konishi, K Yoh Japanese Journal of Applied Physics 50 (6S), 06GE14, 2011 | 3 | 2011 |
| Epitaxial graphene FETs with high on/off ratio grown on 4H-SiC K Yoh, K Konishi, H Hibino 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), 334-336, 2009 | 3 | 2009 |
| Assessment of channel temperature in β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging JS Lundh, G Pavlidis, K Sasaki, A Centrone, JA Spencer, HN Masten, ... Applied Physics Letters 124 (5), 2024 | 1 | 2024 |
