Artikler med krav om offentlig adgang - Thorsten MehrtensFå flere oplysninger
Ikke tilgængelige nogen steder: 19
Effects of instrument imperfections on quantitative scanning transmission electron microscopy
FF Krause, M Schowalter, T Grieb, K Müller-Caspary, T Mehrtens, ...
Ultramicroscopy 161, 146-160, 2016
Krav: German Research Foundation
Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction
C Mahr, K Müller-Caspary, T Grieb, M Schowalter, T Mehrtens, FF Krause, ...
Ultramicroscopy 158, 38-48, 2015
Krav: German Research Foundation
Structural and optical properties of InAs/(In) GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K
C Carmesin, F Olbrich, T Mehrtens, M Florian, S Michael, S Schreier, ...
Physical Review B 98 (12), 125407, 2018
Krav: German Research Foundation, Federal Ministry of Education and Research, Germany
Nanoscopic insights into InGaN/GaN core–shell nanorods: structure, composition, and luminescence
M Müller, P Veit, FF Krause, T Schimpke, S Metzner, F Bertram, ...
Nano letters 16 (9), 5340-5346, 2016
Krav: German Research Foundation
Conventional transmission electron microscopy imaging beyond the diffraction and information limits
A Rosenauer, FF Krause, K Müller, M Schowalter, T Mehrtens
Physical review letters 113 (9), 096101, 2014
Krav: German Research Foundation
Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S) TEM
T Mehrtens, S Bley, PV Satyam, A Rosenauer
Micron 43 (8), 902-909, 2012
Krav: German Research Foundation
Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images
T Mehrtens, K Müller, M Schowalter, D Hu, DM Schaadt, A Rosenauer
Ultramicroscopy 131, 1-9, 2013
Krav: German Research Foundation
Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content
L Hoffmann, H Bremers, H Jönen, U Rossow, M Schowalter, T Mehrtens, ...
Applied Physics Letters 102 (10), 2013
Krav: German Research Foundation
Using molecular dynamics for multislice TEM simulation of thermal diffuse scattering in AlGaN
FF Krause, D Bredemeier, M Schowalter, T Mehrtens, T Grieb, ...
Ultramicroscopy 189, 124-135, 2018
Krav: German Research Foundation
Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation
T Grieb, M Tewes, M Schowalter, K Müller-Caspary, FF Krause, ...
Ultramicroscopy 184, 29-36, 2018
Krav: German Research Foundation
Influence of static atomic displacements on composition quantification of AlGaN/GaN heterostructures from HAADF-STEM images
M Schowalter, I Stoffers, FF Krause, T Mehrtens, K Müller, M Fandrich, ...
Microscopy and Microanalysis 20 (5), 1463-1470, 2014
Krav: German Research Foundation
Nanoporous gold dealloyed from AuAg and AuCu: Comparison of structure and chemical composition
C Mahr, M Schowalter, C Mitterbauer, A Lackmann, L Fitzek, T Mehrtens, ...
Materialia 2, 131-137, 2018
Krav: German Research Foundation
ImageEval. A software for the processing, evaluation and acquisition of (S) TEM images
K Müller‐Caspary, T Mehrtens, M Schowalter, T Grieb, A Rosenauer, ...
European Microscopy Congress 2016: Proceedings, 481-482, 2016
Krav: German Research Foundation
Spatially resolved luminescence properties of non-and semi-polar InGaN quantum wells on GaN microrods
J Dühn, C Tessarek, M Schowalter, T Coenen, B Gerken, ...
Journal of Physics D: Applied Physics 51 (35), 355102, 2018
Krav: German Research Foundation
Accuracy and precision of position determination in ISTEM imaging of BaTiO3
D Marquardt, M Schowalter, FF Krause, T Grieb, C Mahr, T Mehrtens, ...
Ultramicroscopy 227, 113325, 2021
Krav: German Research Foundation
Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
T Aschenbrenner, M Schowalter, T Mehrtens, K Mueller-Caspary, M Fikry, ...
Journal of Applied Physics 119 (17), 2016
Krav: German Research Foundation
Dose efficient annular bright field contrast with the ISTEM method: A proof of principle demonstration
FF Krause, M Schowalter, B Gerken, D Marquardt, T Grieb, T Mehrtens, ...
Ultramicroscopy 245, 113661, 2023
Krav: German Research Foundation
Angle‐resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis
K Müller‐Caspary, O Oppermann, T Grieb, A Rosenauer, M Schowalter, ...
European Microscopy Congress 2016: Proceedings, 649-650, 2016
Krav: German Research Foundation
Temperature dependence of Z-Contrast for InGaN
T Mehrtens, M Schowalter, A Rosenauer, D Tytko, P Choi, D Raabe, ...
Microscopy and Microanalysis 18 (S2), 1818-1819, 2012
Krav: German Research Foundation
Tilgængelige et sted: 16
Composition mapping in InGaN by scanning transmission electron microscopy
A Rosenauer, T Mehrtens, K Müller, K Gries, M Schowalter, PV Satyam, ...
Ultramicroscopy 111 (8), 1316-1327, 2011
Krav: German Research Foundation
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