| Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991 | 936 | 1991 |
| Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 686 | 1992 |
| Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991 | 360 | 1991 |
| Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ... Journal of Applied Physics 87 (9), 4449-4455, 2000 | 329 | 2000 |
| Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors G Hasnain, K Tai, L Yang, YH Wang, RJ Fischer, JD Wynn, B Weir, ... IEEE Journal of Quantum Electronics 27 (6), 1377-1385, 1991 | 265 | 1991 |
| Ultra-thin gate dielectrics: They break down, but do they fail? BE Weir, PJ Silverman, D Monroe, KS Krisch, MA Alam, GB Alers, ... International Electron Devices Meeting. IEDM Technical Digest, 73-76, 1997 | 239 | 1997 |
| Absorption and luminescence studies of free-standing porous silicon films YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ... Physical Review B 49 (8), 5386, 1994 | 158 | 1994 |
| Hot-electronic injection testing of transistors on a wafer B Weir US Patent 7,898,277, 2011 | 152 | 2011 |
| Explanation of stress-induced damage in thin oxides DJ Bude, BE Weir, PJ Silverman International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 149 | 1998 |
| Precursor ion damage and angular dependence of single event gate rupture in thin oxides FW Sexton, DM Fleetwood, MR Shaneyfelt, PE Dodd, GL Hash, ... IEEE Transactions on Nuclear Science 45 (6), 2509-2518, 1998 | 135 | 1998 |
| A study of soft and hard breakdown-Part I: Analysis of statistical percolation conductance MA Alam, BE Weir, PJ Silverman IEEE Transactions on Electron Devices 49 (2), 232-238, 2002 | 131 | 2002 |
| 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibre K Tai, G Hasnain, JD Wynn, RJ Fischer, YH Wang, B Weir, J Gamelin, ... Electronics letters 26 (19), 1628-1629, 1990 | 126 | 1990 |
| Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ... International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997 | 119 | 1997 |
| A study of soft and hard breakdown-Part II: Principles of area, thickness, and voltage scaling MA Alam, BE Weir, PJ Silverman IEEE Transactions on Electron Devices 49 (2), 239-246, 2002 | 100 | 2002 |
| Understanding the limits of ultrathin SiO2 and Si O N gate dielectrics for sub-50 nm CMOS ML Green, TW Sorsch, GL Timp, DA Muller, BE Weir, PJ Silverman, ... Microelectronic Engineering 48 (1-4), 25-30, 1999 | 100 | 1999 |
| Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900° C ML Green, BE Weir, D Brasen, YF Hsieh, G Higashi, A Feygenson, ... Journal of applied physics 69 (2), 745-751, 1991 | 93 | 1991 |
| Progress toward 10 nm CMOS devices G Timp, KK Bourdelle, JE Bower, FH Baumann, T Boone, R Cirelli, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 88 | 1998 |
| Gate oxide reliability projection to the sub-2 nmregime BE Weir, MA Alam, JD Bude, PJ Silverman, A Ghetti, F Baumann, ... Semiconductor Science and Technology 15 (5), 455, 2000 | 80 | 2000 |
| MBE growth and properties of Fe3 (Al, Si) on GaAs (100) M Hong, HS Chen, J Kwo, AR Kortan, JP Mannaerts, BE Weir, ... Journal of crystal growth 111 (1-4), 984-988, 1991 | 79 | 1991 |
| Explanation of soft and hard breakdown and its consequences for area scaling MA Alam, B Weir, J Bude, P Silverman, D Monroe International electron devices meeting 1999. Technical digest (Cat. No …, 1999 | 77 | 1999 |