| Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on electron devices 60 (10), 3157-3165, 2013 | 280 | 2013 |
| Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ... Scientific Reports 6 (1), 23708, 2016 | 113 | 2016 |
| MOVPE growth of semipolar III-nitride semiconductors on CVD graphene P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ... Journal of crystal growth 372, 105-108, 2013 | 93 | 2013 |
| Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ... Journal of Applied Physics 109 (1), 2011 | 61 | 2011 |
| The mechanism of Ni-assisted GaN nanowire growth CB Maliakkal, N Hatui, RD Bapat, BA Chalke, AA Rahman, ... Nano Letters 16 (12), 7632-7638, 2016 | 52 | 2016 |
| ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment AP Shah, AA Rahman, A Bhattacharya Semiconductor Science and Technology 30 (1), 015021, 2014 | 29 | 2014 |
| Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers P Gupta, AA Rahman, N Hatui, JB Parmar, BA Chalke, RD Bapat, ... Applied Physics Letters 103 (18), 2013 | 27 | 2013 |
| MOVPE growth and characterization of a ‐plane AlGaN over the entire composition range MR Laskar, T Ganguli, AA Rahman, AP Shah, MR Gokhale, ... physica status solidi (RRL)–Rapid Research Letters 4 (7), 163-165, 2010 | 23 | 2010 |
| MOVPE growth of semipolar (112¯ 2) Al1− xInxN across the alloy composition range (0≤ x≤ 0.55) N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ... Journal of Crystal Growth 411, 106-109, 2015 | 22 | 2015 |
| High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers MR Laskar, T Ganguli, N Hatui, AA Rahman, MR Gokhale, A Bhattacharya Journal of crystal growth 315 (1), 208-210, 2011 | 22 | 2011 |
| Optimization of Gas Ambient for High Quality β-Ga2O3 Single Crystals Grown by the Optical Floating Zone Technique E Hossain, R Kulkarni, R Mondal, S Guddolian, AA Rahman, ... ECS Journal of Solid State Science and Technology 8 (7), Q3144, 2019 | 20 | 2019 |
| Anisotropic structural and optical properties of a-plane (112¯) AlInN nearly-lattice-matched to GaN MR Laskar, T Ganguli, AA Rahman, A Arora, N Hatui, MR Gokhale, ... Applied Physics Letters 98 (18), 2011 | 20 | 2011 |
| Direct MOVPE growth of semipolar (112¯ 2) AlxGa1− xN across the alloy composition range N Hatui, AA Rahman, CB Maliakkal, A Bhattacharya Journal of Crystal Growth 437, 1-5, 2016 | 16 | 2016 |
| Inductively coupled plasma–reactive ion etching of c-and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry AP Shah, MR Laskar, A Azizur Rahman, MR Gokhale, A Bhattacharya Journal of Vacuum Science & Technology A 31 (6), 2013 | 16 | 2013 |
| Synthesis and characterization of Cu 3 SbS 4 thin films grown by co-sputtering metal precursors and subsequent sulfurization AA Rahman, E Hossian, H Vaishnav, JB Parmar, A Bhattacharya, ... Materials Advances 1 (9), 3333-3338, 2020 | 14 | 2020 |
| Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma AP Shah, A Azizur Rahman, A Bhattacharya Journal of Vacuum Science & Technology A 38 (1), 2020 | 13 | 2020 |
| Influence of buffer layers on the microstructure of MOVPE grown a-plane InN MR Laskar, T Ganguli, A Kadir, N Hatui, AA Rahman, AP Shah, ... Journal of crystal growth 315 (1), 233-237, 2011 | 13 | 2011 |
| Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates CB Maliakkal, AA Rahman, N Hatui, BA Chalke, RD Bapat, ... Journal of Crystal Growth 439, 47-53, 2016 | 12 | 2016 |
| Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy N Lobo, A Kadir, MR Laskar, AP Shah, MR Gokhale, AA Rahman, ... Journal of Crystal Growth 310 (23), 4747-4750, 2008 | 12 | 2008 |
| Laser induced structural phase transitions in Cu3SbS4 thin films AA Rahman, E Hossain, H Vaishnav, A Bhattacharya, A Sarma Semiconductor Science and Technology 34 (10), 105026, 2019 | 11 | 2019 |
Arnab BhattacharyaProfessor, Dept. of CMPMS, Tata Institute of Fundamental ResearchVerificeret mail på tifr.res.in
