| Optical absorption edge of semi-insulating GaAs and InP at high temperatures M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje Applied Physics Letters 70 (26), 3540-3542, 1997 | 228 | 1997 |
| High-performance 1.6 µm single-epitaxy top-emitting VCSEL W Yuen, GS Li, RF Nabiev, J Boucart, P Kner, RJ Stone, D Zhang, ... Electronics Letters 36 (13), 1121-1123, 2000 | 176 | 2000 |
| Self-consistent determination of the band offsets in strained-layer quantum wells and the bowing parameter of bulk M Beaudoin, A Bensaada, R Leonelli, P Desjardins, RA Masut, L Isnard, ... Physical Review B 53 (4), 1990, 1996 | 68 | 1996 |
| Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR J Boucart, R Pathak, D Zhang, M Beaudoin, P Kner, D Sun, RJ Stone, ... IEEE Photonics Technology Letters 15 (9), 1186-1188, 2003 | 48 | 2003 |
| Blueshift of the optical band gap: Implications for the quantum confinement effect in a-Si:H/a-:H multilayers M Beaudoin, M Meunier, CJ Arsenault Physical Review B 47 (4), 2197, 1993 | 48 | 1993 |
| Flexible High‐Performance Photovoltaic Devices based on 2D MoS2 Diodes with Geometrically Asymmetric Contact Areas A Abnavi, R Ahmadi, H Ghanbari, M Fawzy, A Hasani, T De Silva, ... Advanced Functional Materials 33 (7), 2210619, 2023 | 44 | 2023 |
| -NMR of isolated implanted into a thin copper film Z Salman, AI Mansour, KH Chow, M Beaudoin, I Fan, J Jung, TA Keeler, ... Physical Review B—Condensed Matter and Materials Physics 75 (7), 073405, 2007 | 43 | 2007 |
| Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy RYF Yip, A Aït-Ouali, A Bensaada, P Desjardins, M Beaudoin, L Isnard, ... Journal of applied physics 81 (4), 1905-1915, 1997 | 22 | 1997 |
| Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP (001) using tertiarybutylarsine P Desjardins, M Beaudoin, R Leonelli, G L’Espérance, RA Masut Journal of applied physics 80 (2), 846-852, 1996 | 20 | 1996 |
| Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy M Beaudoin, CJ Arsenault, R Izquierdo, M Meunier Applied physics letters 55 (25), 2640-2642, 1989 | 17 | 1989 |
| Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy M Beaudoin, RB Lewis, JJ Andrews, V Bahrami-Yekta, M Masnadi-Shirazi, ... Journal of Crystal Growth 425, 245-249, 2015 | 16 | 2015 |
| Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy M Beaudoin, ICW Chan, D Beaton, M Elouneg-Jamroz, T Tiedje, ... Journal of crystal growth 311 (7), 1662-1665, 2009 | 15 | 2009 |
| On the blue-shift of the optical bandgap of a-Si: H/a-SiNx: H multilayer structures M Beaudoin, CJ Arsenault, M Meunier Journal of non-crystalline solids 137, 1099-1102, 1991 | 14 | 1991 |
| Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation RG Decorby, RI Macdonald, M Beaudoin, T Pinnington, T Tiedje, F Gouin Journal of Electronic Materials 26, L25-L28, 1997 | 10 | 1997 |
| Electronic transport through a-Si: H/a-SiNx: H single and double barrier structures CJ Arsenault, M Meunier, M Beaudoin, B Movaghar Journal of non-crystalline solids 137, 1111-1114, 1991 | 10 | 1991 |
| Evidence for deep centers in n-InP grown by MOVPE M Benzaquen, D Walsh, M Beaudoin, K Mazuruk, N Puetz Journal of Crystal Growth 93 (1-4), 562-568, 1988 | 10 | 1988 |
| Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs SR Johnson, P Dowd, W Braun, U Koelle, CM Ryu, M Beaudoin, CZ Guo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 9 | 2000 |
| Perpendicular transport in a-Si:H/a-:H single- and double-barrier structures CJ Arsenault, M Meunier, M Beaudoin, B Movaghar Physical Review B 44 (20), 11521, 1991 | 9 | 1991 |
| Anomalous electrical behavior of n-type InP M Benzaquen, M Beaudoin, D Walsh, N Puetz Physical Review B 38 (11), 7824, 1988 | 9 | 1988 |
| Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss M Beaudoin, M Adamcyk, Z Gelbart, U Giesen, I Kelson, Y Levy, ... Applied physics letters 72 (25), 3288-3290, 1998 | 8 | 1998 |
Thomas TiedjeElectrical and Computer Engineering, University of Victoria, Victoria, BCVerificeret mail på uvic.ca