Man Hoi Wong

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Masataka HigashiwakiOsaka Metropolitan University | National Institute of Information and Communications TechnologyVerificeret mail på omu.ac.jp
Umesh MishraUCSBVerificeret mail på ece.ucsb.edu
Jim SpeckProfessor of Materials, UCSBVerificeret mail på ucsb.edu
Stacia KellerUniversity of California Santa BarbaraVerificeret mail på ece.ucsb.edu
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Verificeret mail på buffalo.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerificeret mail på ece.osu.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerificeret mail på engineering.ucsb.edu
David BrownBAE SystemsVerificeret mail på baesystems.com
Stephen W. KaunApeel SciencesVerificeret mail på apeelsciences.com
Keita KonishiNovel Crystal technology, Inc.Verificeret mail på novelcrystal.co.jp
George MalliarasPrince Philip Professor of Technology at University of CambridgeVerificeret mail på cam.ac.uk
Sansaptak DasguptaHardware Engineer, AppleVerificeret mail på apple.com
Richard HillManager - MicronVerificeret mail på micron.com
Tomás PalaciosMITVerificeret mail på mit.edu
Alessandro ChiniProfessor of Electronics, University of Modena and Reggio Emilia, ItalyVerificeret mail på unimore.it
Jing LuUniversity of California, Santa BarbaraVerificeret mail på ece.ucsb.edu
Srabanti ChowdhuryStanford UniversityVerificeret mail på stanford.edu
Rongming ChuThe Pennsylvania State UniversityVerificeret mail på psu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerificeret mail på osu.edu
Steven RingelThe Ohio State UniversityVerificeret mail på osu.edu

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Man Hoi Wong

Associate Professor, ECE, Hong Kong University of Science and Technology

Verificeret mail på ust.hk


Titel Sortér efter henvisninger Sortér efter årstal Sortér efter titel	Citeret af Citeret af	År
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics M Higashiwaki, K Sasaki, T Kamimura, MH Wong, D Krishnamurthy, ... Applied Physics Letters 103 (12), 123511, 2013	796	2013
Field-Plated Ga< sub> 2</sub> O< sub> 3</sub> MOSFETs With a Breakdown Voltage of Over 750 V MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Electron Device Letters, IEEE 37 (2), 212-215, 2016	582*	2016
How to make ohmic contacts to organic semiconductors Y Shen, AR Hosseini, MH Wong, GG Malliaras ChemPhysChem 5 (1), 16-25, 2004	408	2004
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 2007	297	2007
N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, Nidhi, S Dasgupta, DJ Denninghoff, S Kolluri, ... Semiconductor Science and Technology 28 (7), 074009, 2013	260	2013
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions T Kamimura, K Sasaki, MH Wong, D Krishnamurthy, A Kuramata, T Masui, ... Applied Physics Letters 104 (19), 192104, 2014	240	2014
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain MH Wong, Y Nakata, A Kuramata, S Yamakoshi, M Higashiwaki Applied Physics Express 10 (4), 041101, 2017	209	2017
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application S Chowdhury, BL Swenson, MH Wong, UK Mishra Semiconductor Science and Technology 28 (7), 074014, 2013	203	2013
CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion S Chowdhury, MH Wong, BL Swenson, UK Mishra Electron Device Letters, IEEE 33 (1), 41-43, 2012	202	2012
Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ... IEEE Electron Device Letters 40 (9), 1487-1490, 2019	197	2019
Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki IEEE Electron Device Letters 40 (3), 431-434, 2019	196	2019
Acceptor doping of β-Ga2O3 by Mg and N ion implantations MH Wong, CH Lin, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, ... Applied Physics Letters 113 (10), 2018	195	2018
Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Japanese Journal of Applied Physics 55 (12), 1202B9, 2016	137	2016
Vertical β-Ga₂O₃ Power Transistors: A Review MH Wong, M Higashiwaki IEEE Transactions on Electron Devices 67 (10), 3925-3937, 2020	135	2020
Enhancement-Mode β-Ga2O3 Current Aperture Vertical MOSFETs with N-Ion-Implanted Blocker MH Wong, H Murakami, Y Kumagai, M Higashiwaki IEEE Electron Device Letters 41 (2), 296-299, 2020	114	2020
Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation MH Wong, A Takeyama, T Makino, T Ohshima, K Sasaki, A Kuramata, ... Applied Physics Letters 112 (2), 023503, 2018	111	2018
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Applied Physics Letters 109 (19), 193503, 2016	111	2016
Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Applied Physics Letters 106 (3), 2015	111	2015
Growth and electrical characterization of N-face AlGaN/GaN heterostructures S Rajan, M Wong, Y Fu, F Wu, JS Speck, UK Mishra Japanese journal of applied physics 44 (11L), L1478, 2005	109	2005
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ... Applied Physics Letters 99 (22), 2011	106	2011

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