Folgen
Meng Jia
Titel
Zitiert von
Zitiert von
Jahr
Lab-based ambient pressure X-ray photoelectron spectroscopy from past to present
C Arble, M Jia, JT Newberg
Surface Science Reports 73 (2), 37-57, 2018
932018
Synthesis and characterization of ZnO/CuO vertically aligned hierarchical tree-like nanostructure
Z Li, M Jia, B Abraham, JC Blake, D Bodine, JT Newberg, L Gundlach
Langmuir 34 (3), 961-969, 2018
512018
InAlN/GaN HEMT on Si With fmax = 270 GHz
P Cui, M Jia, H Chen, G Lin, J Zhang, L Gundlach, JQ Xiao, Y Zeng
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1-6, 2021
412021
Liquid–gas interfacial chemistry of gallium–indium eutectic in the presence of oxygen and water vapor
M Jia, JT Newberg
The Journal of Physical Chemistry C 123 (47), 28688-28694, 2019
272019
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
J Zhang, M Jia, MG Sales, Y Zhao, G Lin, P Cui, C Santiwipharat, C Ni, ...
ACS Applied Electronic Materials 3 (12), 5483-5495, 2021
202021
Energy Band Architecture of a Hierarchical ZnO/Au/CuxO Nanoforest by Mimicking Natural Superhydrophobic Surfaces
Z Li, M Jia, S Doble, E Hockey, H Yan, JP Avenoso, D Bodine, Y Zhang, ...
ACS applied materials & interfaces 11 (43), 40490-40502, 2019
192019
High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric
J Zhang, P Cui, G Lin, Y Zhang, MG Sales, M Jia, Z Li, C Goodwin, ...
Applied Physics Express 12 (9), 096502, 2019
192019
Surface chemistry of liquid bismuth under oxygen and water vapor studied by ambient pressure X-ray photoelectron spectroscopy
M Jia, JT Newberg
Applied Surface Science 539, 148219, 2021
152021
Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing
J Zhang, G Lin, P Cui, M Jia, Z Li, L Gundlach, Y Zeng
IEEE Transactions on Electron Devices 67 (6), 2346-2351, 2020
142020
InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric
P Cui, J Zhang, M Jia, G Lin, L Wei, H Zhao, L Gundlach, Y Zeng
Japanese Journal of Applied Physics 59 (2), 020901, 2020
142020
Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer
G Lin, MQ Zhao, M Jia, J Zhang, P Cui, L Wei, H Zhao, ATC Johnson, ...
Journal of Physics D: Applied Physics 53 (10), 105103, 2019
132019
Crystallization Retardation of Ultrathin Films of Poly[(R)-3-hydroxybutyrate] and a Random Copolymer Poly[(R)-3-hydroxybutyrate-co-(R)-3-hydroxyhexanoate …
C Liu, I Noda, DB Chase, Y Zhang, J Qu, M Jia, C Ni, JF Rabolt
Macromolecules 52 (19), 7343-7352, 2019
82019
Intermolecular Hydrogen Bonding between Poly[(R)-3-hydroxybutyrate] (PHB) and Pseudoboehmite and Its Effect on Crystallization of PHB
C Liu, M Jia, J Qu, I Noda, DB Chase, R Street, JF Rabolt
ACS Applied Polymer Materials 2 (11), 4762-4769, 2020
72020
Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment
G Lin, MQ Zhao, M Jia, P Cui, H Zhao, J Zhang, L Gundlach, X Liu, ...
Journal of Physics D: Applied Physics 53 (41), 415106, 2020
62020
The Influence of Water Vapor on the Electrochemical Shift of an Ionic Liquid Measured by Ambient Pressure X‐ray Photoelectron Spectroscopy
M Jia, A Broderick, J Newberg
ChemPhysChem, 2021
52021
A versatile strategy for controlled assembly of plasmonic metal/semiconductor hemispherical nano-heterostructure arrays
M Jia, Y Zhang, Z Li, E Crouch, S Doble, J Avenoso, H Yan, C Ni, ...
Nanoscale 12 (33), 17530-17537, 2020
52020
Fmax= 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
P Cui, M Jia, G Lin, J Zhang, L Gundlach, Y Zeng
arXiv preprint arXiv:2005.08422, 2020
32020
Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor
J Zhang, L Wei, M Jia, P Cui, Y Zeng
2021 Device Research Conference (DRC), 1-2, 2021
12021
Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment
J Zhang, H Zhao, X Ye, M Jia, G Lin, Z Yang, Y Wang, S Wei, Y Lin, Q Sun, ...
ACS Applied Materials & Interfaces 16 (38), 51010-51019, 2024
2024
Investigating Plasmonic Resonances in Metal/Semiconductor Heterostructures
J Avenoso, M Jia, O Babawale, L Gundlach
Bulletin of the American Physical Society 66, 2021
2021
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