Efficient combination of Roll-to-Roll compatible techniques towards the large area deposition of a polymer dielectric film and the solution-processing of an organic … C Koutsiaki, T Kaimakamis, A Zachariadis, A Papamichail, C Kamaraki, ...
Organic Electronics 73, 231-239, 2019
36 2019 Epitaxial growth of β-Ga2O3 by hot-wall MOCVD D Gogova, M Ghezellou, DQ Tran, S Richter, A Papamichail, AR Persson, ...
AIP Advances 12 (5), 2022
28 2022 Organic transistors based on airbrushed small molecule-insulating polymer blends with mobilities exceeding 1 cm 2 V− 1 s− 1 T Kaimakamis, C Pitsalidis, A Papamichail, A Laskarakis, S Logothetidis
RSC Advances 6 (99), 97077-97083, 2016
22 2016 Mg-doping and free-hole properties of hot-wall MOCVD GaN A Papamichail, A Kakanakova-Georgieva, EÖ Sveinbjörnsson, ...
Journal of Applied Physics 131 (18), 2022
21 2022 Enhancement of P3HT: PCBM photovoltaic shells efficiency incorporating core-shell Au@ Ag plasmonic nanoparticles L Tzounis, C Gravalidis, A Papamichail, S Logothetidis
Materials Today: Proceedings 3 (3), 832-839, 2016
20 2016 Strain and stress relationships for optical phonon modes in monoclinic crystals with R Korlacki, M Stokey, A Mock, S Knight, A Papamichail, V Darakchieva, ...
Physical Review B 102 (18), 180101, 2020
19 2020 Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers A Papamichail, AR Persson, S Richter, P Kühne, V Stanishev, ...
Applied Physics Letters 122 (15), 2023
13 2023 Polarity control by inversion domain suppression in N-polar III-nitride heterostructures H Zhang, I Persson, JT Chen, A Papamichail, DQ Tran, POÅ Persson, ...
Crystal Growth & Design 23 (2), 1049-1056, 2023
10 2023 On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC H Zhang, I Persson, A Papamichail, POÅ Persson, PP Paskov, ...
Journal of Applied Physics 131 (5), 2022
10 2022 High-quality N-polar GaN optimization by multi-step temperature growth process H Zhang, T Chen Jr, A Papamichail, I Persson, PP Paskov, V Darakchieva
Journal of Crystal Growth 603, 127002, 2023
8 2023 Enhancement of 2DEG effective mass in AlN/Al0. 78Ga0. 22N high electron mobility transistor structure determined by THz optical Hall effect P Kühne, N Armakavicius, A Papamichail, DQ Tran, V Stanishev, ...
Applied Physics Letters 120 (25), 2022
8 2022 Mg segregation at inclined facets of pyramidal inversion domains in GaN: Mg AR Persson, A Papamichail, V Darakchieva, POÅ Persson
Scientific Reports 12 (1), 17987, 2022
5 2022 Morphology of Thin Films of Aromatic Ellagic Acid and Its Hydrogen Bonding Interactions E Bittrich, J Domke, D Jehnichen, L Bittrich, M Malanin, A Janke, ...
The Journal of Physical Chemistry C 124 (30), 16381-16390, 2020
5 2020 Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect N Armakavicius, S Knight, P Kühne, V Stanishev, DQ Tran, S Richter, ...
APL Materials 12 (2), 2024
4 2024 Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1− xN/GaN heterostructures (0.07≤ x≤ 0.42) S Knight, S Richter, A Papamichail, P Kühne, N Armakavicius, S Guo, ...
Journal of Applied Physics 134 (18), 2023
4 2023 Incorporation of magnesium into GaN regulated by intentionally large amounts of hydrogen during growth by MOCVD A Kakanakova-Georgieva, A Papamichail, V Stanishev, V Darakchieva
physica status solidi (b) 259 (10), 2200137, 2022
3 2022 Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect N Armakavicius, P Kühne, A Papamichail, H Zhang, S Knight, A Persson, ...
Materials 17 (13), 3343, 2024
2 2024 Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC (0001̄) H Zhang, JT Chen, A Papamichail, I Persson, DQ Tran, PP Paskov, ...
Journal of Crystal Growth 651, 127971, 2025
1 2025 Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties A Papamichail, AR Persson, S Richter, V Stanishev, N Armakavicius, ...
Applied Physics Letters 125 (12), 2024
1 2024 Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate S Knight, S Richter, A Papamichail, M Stokey, R Korlacki, V Stanishev, ...
Applied Physics Letters 124 (3), 2024
1 2024