| High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing MH Breckenridge, J Tweedie, P Reddy, Y Guan, P Bagheri, D Szymanski, ... Applied Physics Letters 118 (2), 2021 | 47 | 2021 |
| A biomimetic Schlemm's canal inner wall: A model to study outflow physiology, glaucoma pathology and high-throughput drug screening CN Dautriche, D Szymanski, M Kerr, KY Torrejon, M Bergkvist, Y Xie, ... Biomaterials 65, 86-92, 2015 | 31 | 2015 |
| Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN D Khachariya, D Szymanski, R Sengupta, P Reddy, E Kohn, Z Sitar, ... Journal of Applied Physics 128 (6), 2020 | 18 | 2020 |
| Role of polarity in SiN on Al/GaN and the pathway to stable contacts P Reddy, D Khachariya, D Szymanski, MH Breckenridge, B Sarkar, ... Semiconductor Science and Technology 35 (5), 055007, 2020 | 14 | 2020 |
| Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures A Comstock, M Biliroglu, D Seyitliyev, A McConnell, E Vetter, P Reddy, ... Advanced Optical Materials 11 (1), 2201535, 2023 | 12 | 2023 |
| GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions D Szymanski, D Khachariya, TB Eldred, P Bagheri, S Washiyama, ... Journal of Applied Physics 131 (1), 2022 | 9 | 2022 |
| On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers D Khachariya, D Szymanski, MH Breckenridge, P Reddy, E Kohn, Z Sitar, ... Applied Physics Letters 118 (12), 2021 | 9 | 2021 |
| On the Ge shallow-to-deep level transition in Al-rich AlGaN P Bagheri, P Reddy, S Mita, D Szymanski, JH Kim, Y Guan, D Khachariya, ... Journal of Applied Physics 130 (5), 2021 | 8 | 2021 |
| Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control D Szymanski, K Wang, F Kaess, R Kirste, S Mita, P Reddy, Z Sitar, ... Semiconductor Science and Technology 37 (1), 015005, 2021 | 7 | 2021 |
| A Path Toward Vertical GaN Superjunction Devices D Khachariya, D Szymanski, P Reddy, E Kohn, Z Sitar, R Collazo, ... ECS Transactions 98 (6), 69, 2020 | 7 | 2020 |
| Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation D Khachariya, D Szymanski, P Reddy, E Kohn, Z Sitar, R Collazo, ... Applied Physics Letters 120 (17), 2022 | 6 | 2022 |
| Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics R Sengupta, S Vaidya, D Szymanski, D Khachariya, M Bockowski, ... ACS Applied Nano Materials, 2023 | 4 | 2023 |
| Low resistivity, p-type, N-Polar GaN achieved by chemical potential control S Rathkanthiwar, D Szymanski, D Khachariya, P Bagheri, JH Kim, S Mita, ... Applied Physics Express 15 (8), 081004, 2022 | 2 | 2022 |
| Process and Integration of Dielectrics Required for 10nm and Beyond Scaling RD Clark, K Tapily, S Consiglio, T Hakamata, D O'Meara, D Newman, ... ECS Transactions 72 (2), 319, 2016 | 2 | 2016 |
| Development of III-Nitride Superjunctions DE Szymanski North Carolina State University, 2021 | 1 | 2021 |
| (Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices S Pavlidis, D Khachariya, D Szymanski, P Reddy, E Kohn, Z Sitar, ... Electrochemical Society Meeting Abstracts 241, 1313-1313, 2022 | | 2022 |
| (Invited) Ion Implantation and Polarity Control: Paths Toward a III-Nitride Superjunction R Collazo, D Szymanski, D Khachariya, MH Breckenridge, Y Guan, ... Electrochemical Society Meeting Abstracts 240, 983-983, 2021 | | 2021 |
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateBestätigte E-Mail-Adresse bei ncsu.edu