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Maciej Sakowicz
Maciej Sakowicz
Institute of High Pressure Physics, PAS
Bestätigte E-Mail-Adresse bei unipress.waw.pl - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Field effect transistors for terahertz detection: Physics and first imaging applications
W Knap, M Dyakonov, D Coquillat, F Teppe, N Dyakonova, J Łusakowski, ...
Journal of Infrared, Millimeter, and Terahertz Waves 30, 1319-1337, 2009
4662009
Broadband terahertz imaging with highly sensitive silicon CMOS detectors
F Schuster, D Coquillat, H Videlier, M Sakowicz, F Teppe, L Dussopt, ...
Optics express 19 (8), 7827-7832, 2011
4032011
Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
M Sakowicz, MB Lifshits, OA Klimenko, F Schuster, D Coquillat, F Teppe, ...
Journal of Applied Physics 110 (5), 2011
2082011
Charge Separation in Semicrystalline Polymeric Semiconductors by Photoexcitation:<? format?> Is the Mechanism Intrinsic or Extrinsic?
F Paquin, G Latini, M Sakowicz, PL Karsenti, L Wang, D Beljonne, ...
Physical review letters 106 (19), 197401, 2011
1722011
Two-dimensional spatial coherence of excitons in semicrystalline polymeric semiconductors: Effect of molecular weight
F Paquin, H Yamagata, NJ Hestand, M Sakowicz, N Bérubé, M Côté, ...
Physical Review B—Condensed Matter and Materials Physics 88 (15), 155202, 2013
1322013
A broadband THz imager in a low-cost CMOS technology
F Schuster, H Videlier, A Dupret, D Coquillat, M Sakowicz, JP Rostaing, ...
2011 IEEE International Solid-State Circuits Conference, 42-43, 2011
1062011
Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors
M Sakowicz, J Łusakowski, K Karpierz, M Grynberg, W Knap, W Gwarek
Journal of Applied Physics 104 (2), 2008
692008
Field effect transistors for terahertz detection and emission
W Knap, S Nadar, H Videlier, S Boubanga-Tombet, D Coquillat, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32, 618-628, 2011
582011
Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors
S Nadar, H Videlier, D Coquillat, F Teppe, M Sakowicz, N Dyakonova, ...
Journal of Applied Physics 108 (5), 2010
572010
Terahertz radiation detection by field effect transistor in magnetic field
S Boubanga-Tombet, M Sakowicz, D Coquillat, F Teppe, W Knap, ...
Applied Physics Letters 95 (7), 2009
452009
Low frequency noise and trap density in GaN/AlGaN field effect transistors
P Sai, J Jorudas, M Dub, M Sakowicz, V Jakštas, DB But, P Prystawko, ...
Applied Physics Letters 115 (18), 2019
342019
The effect of phase morphology on the nature of long-lived charges in semiconductor polymer: fullerene systems
F Dou, E Buchaca-Domingo, M Sakowicz, E Rezasoltani, ...
Journal of Materials Chemistry C 3 (15), 3722-3729, 2015
272015
AlGaN/GaN on SiC devices without a GaN buffer layer: Electrical and noise characteristics
J Jorudas, A Šimukovič, M Dub, M Sakowicz, P Prystawko, S Indrišiūnas, ...
Micromachines 11 (12), 1131, 2020
252020
AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
P Sai, DB But, I Yahniuk, M Grabowski, M Sakowicz, P Kruszewski, ...
Semiconductor Science and Technology 34 (2), 024002, 2019
242019
Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕ GaN heterostructures
P Lorenzini, Z Bougrioua, A Tiberj, R Tauk, M Azize, M Sakowicz, ...
Applied Physics Letters 87 (23), 2005
222005
Optical performance of two dimensional electron gas and GaN: C buffer layers in AlGaN/AlN/GaN heterostructures on SiC substrate
RB Adamov, D Pashnev, VA Shalygin, MD Moldavskaya, MY Vinnichenko, ...
Applied Sciences 11 (13), 6053, 2021
212021
Electrical tuning of terahertz plasmonic crystal phases
P Sai, VV Korotyeyev, M Dub, M Słowikowski, M Filipiak, DB But, ...
Physical Review X 13 (4), 041003, 2023
182023
Recombination dynamics in InGaN/GaN nanowire heterostructures on Si (111)
V Cardin, LI Dion-Bertrand, P Grégoire, HPT Nguyen, M Sakowicz, Z Mi, ...
Nanotechnology 24 (4), 045702, 2013
182013
Graphene as a Schottky barrier contact to AlGaN/GaN heterostructures
M Dub, P Sai, A Przewłoka, A Krajewska, M Sakowicz, P Prystawko, ...
Materials 13 (18), 4140, 2020
172020
Imaging above 1 THz limit with Si-MOSFET detectors
F Schuster, H Videlier, M Sakowicz, F Teppe, D Coquillat, B Dupont, ...
35th International Conference on Infrared, Millimeter, and Terahertz Waves, 1-2, 2010
172010
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