| Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing S Wang, L Liu, L Gan, H Chen, X Hou, Y Ding, S Ma, DW Zhang, P Zhou Nature Communications 12 (1), 53, 2021 | 246 | 2021 |
| Recent advances on neuromorphic devices based on chalcogenide phase‐change materials M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao Advanced Functional Materials 30 (50), 2003419, 2020 | 225 | 2020 |
| Small footprint transistor architecture for photoswitching logic and in situ memory C Liu, H Chen, X Hou, H Zhang, J Han, YG Jiang, X Zeng, DW Zhang, ... Nature nanotechnology 14 (7), 662-667, 2019 | 210 | 2019 |
| A threshold switching selector based on highly ordered Ag nanodots for X‐point memory applications Q Hua, H Wu, B Gao, M Zhao, Y Li, X Li, X Hou, MF Chang, P Zhou, ... Advanced Science 6 (10), 1900024, 2019 | 131 | 2019 |
| A logic‐memory transistor with the integration of visible information sensing‐memory‐processing X Hou, C Liu, Y Ding, L Liu, S Wang, P Zhou Advanced Science 7 (21), 2002072, 2020 | 68 | 2020 |
| Ambipolar 2D semiconductors and emerging device applications W Hu, Z Sheng, X Hou, H Chen, Z Zhang, DW Zhang, P Zhou Small Methods 5 (1), 2000837, 2021 | 64 | 2021 |
| Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure X Hou, H Zhang, C Liu, S Ding, W Bao, DW Zhang, P Zhou Small 14 (20), 1800319, 2018 | 53 | 2018 |
| A photoelectric-stimulated MoS2 transistor for neuromorphic engineering S Wang, X Hou, L Liu, J Li, Y Shan, S Wu, DW Zhang, P Zhou Research, 2019 | 41 | 2019 |
| 2D atomic crystals: a promising solution for next‐generation data storage X Hou, H Chen, Z Zhang, S Wang, P Zhou Advanced Electronic Materials 5 (9), 1800944, 2019 | 35 | 2019 |
| Tubular 3D Resistive Random Access Memory Based on Rolled‐Up h‐BN Tube X Hou, R Pan, Q Yu, K Zhang, G Huang, Y Mei, DW Zhang, P Zhou Small 15 (5), 1803876, 2019 | 34 | 2019 |
| Operation mode switchable charge-trap memory based on few-layer MoS2 X Hou, X Yan, C Liu, S Ding, DW Zhang, P Zhou Semiconductor Science and Technology 33 (3), 034001, 2018 | 26 | 2018 |
| Ferroelectric field-effect transistors for logic and in-situ memory applications L Liu, X Hou, H Zhang, J Wang, P Zhou Nanotechnology 31 (42), 424007, 2020 | 10 | 2020 |
| Highly area-efficient low-power SRAM cell with 2 transistors and 2 resistors J Li, J Li, Y Ding, C Liu, X Hou, H Chen, Y Xiong, DW Zhang, Y Chai, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2019 | 9 | 2019 |
| Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors F Wang, J Li, Z Zhang, Y Ding, Y Xiong, X Hou, H Chen, P Zhou Iscience 24 (10), 2021 | 8 | 2021 |
| Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) Q Hua, H Wu, B Gao, M Zhao, Y Li, X Li, X Hou, MF Chang, P Zhou, ... Advanced Science 6 (10), 1970058, 2019 | 6 | 2019 |
| Research Article A Photoelectric-Stimulated MoS S Wang, X Hou, L Liu, J Li, Y Shan, S Wu, DW Zhang, P Zhou | | 2019 |
| Ferroelectric field-effect transistors for logic and In-situ memory applications | | |