| High-specific-power flexible transition metal dichalcogenide solar cells K Nassiri Nazif, A Daus, J Hong, N Lee, S Vaziri, A Kumar, F Nitta, ... nature Communications 12 (1), 7034, 2021 | 160 | 2021 |
| Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory X Liu, D Wang, KH Kim, K Katti, J Zheng, P Musavigharavi, J Miao, ... Nano Letters 21 (9), 3753-3761, 2021 | 145 | 2021 |
| Wurtzite and fluorite ferroelectric materials for electronic memory KH Kim, I Karpov, RH Olsson III, D Jariwala Nature Nanotechnology 18 (5), 422-441, 2023 | 127 | 2023 |
| Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ... Nature nanotechnology 18 (9), 1044-1050, 2023 | 112 | 2023 |
| A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory KH Kim, HY Park, J Shim, G Shin, M Andreev, J Koo, G Yoo, K Jung, ... Nanoscale horizons 5 (4), 654-662, 2020 | 80 | 2020 |
| Double negative differential transconductance characteristic: from device to circuit application toward quaternary inverter JH Lim, J Shim, BS Kang, G Shin, H Kim, M Andreev, KS Jung, KH Kim, ... Advanced Functional Materials 29 (48), 1905540, 2019 | 45 | 2019 |
| Double negative differential resistance device based on hafnium disulfide/pentacene hybrid structure KS Jung, K Heo, MJ Kim, M Andreev, S Seo, JO Kim, JH Lim, KH Kim, ... Advanced Science 7 (19), 2000991, 2020 | 40 | 2020 |
| Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits M Andreev, JW Choi, J Koo, H Kim, S Jung, KH Kim, JH Park Nanoscale Horizons 5 (10), 1378-1385, 2020 | 40 | 2020 |
| High-density, localized quantum emitters in strained 2D semiconductors G Kim, HM Kim, P Kumar, M Rahaman, CE Stevens, J Jeon, K Jo, KH Kim, ... ACS nano 16 (6), 9651-9659, 2022 | 39 | 2022 |
| High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts KH Kim, M Andreev, S Choi, J Shim, H Ahn, J Lynch, T Lee, J Lee, ... ACS nano 16 (6), 8827-8836, 2022 | 34 | 2022 |
| A scalable ferroelectric non-volatile memory operating at 600° C DK Pradhan, DC Moore, G Kim, Y He, P Musavigharavi, KH Kim, ... Nature Electronics, 1-8, 2024 | 28 | 2024 |
| Tuning Polarity in WSe2/AlScN FeFETs via Contact Engineering KH Kim, S Song, B Kim, P Musavigharavi, N Trainor, K Katti, C Chen, ... ACS nano 18 (5), 4180-4188, 2024 | 25 | 2024 |
| Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits J Shim, S woon Jang, JH Lim, H Kim, DH Kang, KH Kim, S Seo, K Heo, ... Nanoscale 11 (27), 12871-12877, 2019 | 25 | 2019 |
| Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2 S Song†, KH Kim†, S Chakravarthi, Z Han, G Kim, KY Ma, HS Shin, ... Applied Physics Letters 123 (18), 2023 | 10 | 2023 |
| Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes KH Kim, Z Han, Y Zhang, P Musavigharavi, J Zheng, DK Pradhan, ... ACS nano, 2024 | 9 | 2024 |
| Nonvolatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures S Singh, KH Kim, K Jo, P Musavigharavi, B Kim, J Zheng, N Trainor, ... ACS nano 18 (27), 17958-17968, 2024 | 4 | 2024 |
| Reconfigurable SWCNT ferroelectric field-effect transistor arrays D Rhee, KH Kim, J Zheng, S Song, LM Peng, RH Olsson III, J Kang, ... arXiv preprint arXiv:2411.03198, 2024 | 1 | 2024 |
| High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities S Song, KH Kim, R Keneipp, N Trainor, C Chen, J Zheng, JM Redwing, ... arXiv preprint arXiv:2406.02008, 2024 | 1 | 2024 |
| Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ... arXiv preprint arXiv:2201.02153, 2022 | 1 | 2022 |
| Post CMOS Compatible Ferroelectric Field Effect Transistor With AIScN Dielectric And 2D Material Channel D Jariwala, RH Olsson III, X Liu, EA Stach, KH Kim US Patent App. 17/354,256, 2021 | 1 | 2021 |
