| Advanced high-K gate dielectric for high-performance short-channel In< inf> 0.7</inf> Ga< inf> 0.3</inf> As quantum well field effect transistors on silicon substrate for low … M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ... Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 278* | 2009 |
| Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures MK Hudait, P Venkateswarlu, SB Krupanidhi Solid-State Electronics 45 (1), 133-141, 2001 | 237 | 2001 |
| Germanium based field-effect transistors: Challenges and opportunities PS Goley, MK Hudait Materials 7 (3), 2301-2339, 2014 | 206 | 2014 |
| Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes MK Hudait, SB Krupanidhi Solid-State Electronics 44 (6), 1089-1097, 2000 | 193 | 2000 |
| Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ... Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002 | 175 | 2002 |
| Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures MK Hudait, SB Krupanidhi Physica B: Condensed Matter 307 (1-4), 125-137, 2001 | 171 | 2001 |
| Ultrahigh-Speed 0.5 V Supply Voltage In< sub> 0.7</sub> Ga< sub> 0.3</sub> As Quantum-Well Transistors on Silicon Substrate S Datta, G Dewey, JM Fastenau, MK Hudait, D Loubychev, WK Liu, ... Electron Device Letters, IEEE 28 (8), 685-687, 2007 | 149* | 2007 |
| Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ... Applied Physics Letters 97 (14), 2010 | 142 | 2010 |
| High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 135 | 2008 |
| The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition< equation>< font face='verdana'> Al</font>< sub> 2 … HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ... Applied Physics Letters 97 (4), 042903-042903-3, 2010 | 132* | 2010 |
| Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates MK Hudait, SB Krupanidhi Materials Science and Engineering: B 87 (2), 141-147, 2001 | 129 | 2001 |
| III–V multijunction solar cell integration with silicon: Present status, challenges and future outlook N Jain, MK Hudait Energy Harvesting and Systems 1 (3-4), 121-145, 2014 | 127 | 2014 |
| Group III-V devices with delta-doped layer under channel region MK Hudait, PG Tolchinsky, RS Chau, M Radosavljevic, R Pillarisetty, ... US Patent App. 12/316,878, 2010 | 126 | 2010 |
| Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element N Shehata, K Meehan, M Hudait, N Jain Journal of Nanoparticle Research 14, 1-10, 2012 | 121 | 2012 |
| Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and … MK Hudait, G Dewey, S Datta, JM Fastenau, J Kavalieros, WK Liu, ... Electron Devices Meeting (IEDM), 2007 IEEE International, 625-628, 2007 | 121* | 2007 |
| Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current D Mohata, B Rajamohanan, T Mayer, M Hudait, J Fastenau, D Lubychev, ... IEEE Electron Device Letters 33 (11), 1568-1570, 2012 | 118 | 2012 |
| Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111) RL Woo, R Xiao, Y Kobayashi, L Gao, N Goel, MK Hudait, TE Mallouk, ... Nano letters 8 (12), 4664-4669, 2008 | 109 | 2008 |
| Modulation-doped multi-gate devices MK Hudait, R Pillarisetty, M Radosavljevic, G Dewey, JT Kavalieros US Patent 8,120,063, 2012 | 108 | 2012 |
| Carrier transport in high-mobility III–V quantum-well transistors and performance impact for high-speed low-power logic applications G Dewey, MK Hudait, K Lee, R Pillarisetty, W Rachmady, M Radosavljevic, ... IEEE electron device letters 29 (10), 1094-1097, 2008 | 106 | 2008 |
| Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures S Hardikar, MK Hudait, P Modak, SB Krupanidhi, N Padha Applied Physics A 68, 49-55, 1999 | 103 | 1999 |
Marko RadosavljevicIntel CorporationBestätigte E-Mail-Adresse bei intel.com
