Carbon monolayer phase condensation on Ni (111) M Eizenberg, JM Blakely
Surface Science 82 (1), 228-236, 1979
737 1979 A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k , and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ...
Advanced Functional Materials 30 (18), 1900657, 2020
218 2020 Carbon interaction with nickel surfaces: Monolayer formation and structural stability M Eizenberg, JM Blakely
The Journal of Chemical Physics 71 (8), 3467-3477, 1979
198 1979 Characterization of electroless deposited Co (W, P) thin films for encapsulation of copper metallization A Kohn, M Eizenberg, Y Shacham-Diamand, Y Sverdlov
Materials Science and Engineering: A 302 (1), 18-25, 2001
165 2001 Annealing-induced interfacial toughening using a molecular nanolayer DD Gandhi, M Lane, Y Zhou, AP Singh, S Nayak, U Tisch, M Eizenberg, ...
Nature 447 (7142), 299-302, 2007
161 2007 Interfacial reactions between Ni films and GaAs A Lahav, M Eizenberg, Y Komem
Journal of applied physics 60 (3), 991-1001, 1986
152 1986 New method for determining flat-band voltage in high mobility semiconductors R Winter, J Ahn, PC McIntyre, M Eizenberg
Journal of Vacuum Science & Technology B 31 (3), 2013
133 2013 Interlayer dielectrics for semiconductor technologies SP Muraka, M Eizenberg, AK Sinha
Elsevier, 2003
124 2003 Formation and Schottky behavior of manganese silicides on n ‐type silicon M Eizenberg, KN Tu
journal of Applied Physics 53 (10), 6885-6890, 1982
122 1982 Raman scattering and stress measurements in Si1−x Gex F Meyer, M Zafrany, M Eizenberg, R Beserman, C Schwebel, C Pellet
Journal of applied physics 70 (8), 4268-4277, 1991
113 * 1991 TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices M Eizenberg, K Littau, S Ghanayem, A Mak, Y Maeda, M Chang, ...
Applied physics letters 65 (19), 2416-2418, 1994
99 1994 The effect of surface roughness on the resistivity increase in nanometric dimensions H Marom, M Eizenberg
Journal of applied physics 99 (12), 2006
91 2006 Evaluation of electroless deposited Co (W, P) thin films as diffusion barriers for copper metallization A Kohn, M Eizenberg, Y Shacham-Diamand, B Israel, Y Sverdlov
Microelectronic engineering 55 (1-4), 297-303, 2001
90 2001 Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applications M Eizenberg, K Littau, S Ghanayem, M Liao, R Mosely, AK Sinha
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 …, 1995
90 1995 Structures of ultra-thin atomic-layer-deposited YY Wu, A Kohn, M Eizenberg
Journal of applied physics 95 (11), 6167-6174, 2004
83 2004 Energy band discontinuities in heterojunctions measured by internal photoemission M Heiblum, MI Nathan, M Eizenberg
Applied physics letters 47 (5), 503-505, 1985
82 1985 Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices R Kröger, M Eizenberg, D Cong, N Yoshida, LY Chen, S Ramaswami, ...
Journal of the Electrochemical Society 146 (9), 3248, 1999
81 1999 Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests I Fisher, M Eizenberg
Thin Solid Films 516 (12), 4111-4121, 2008
78 2008 Analysis of nonideal Schottky and p ‐n junction diodes—Extraction of parameters from I –V plots M Lyakas, R Zaharia, M Eizenberg
Journal of applied physics 78 (9), 5481-5489, 1995
70 1995 Utilization of SiH4 soak and purge in deposition processes MC Tseng, M Chang, RA Srinivas, KD Rinnen, M Eizenberg, S Telford
US Patent 5,817,576, 1998
66 1998 