Folgen
Jingyi Ma
Jingyi Ma
Bestätigte E-Mail-Adresse bei fudan.edu.cn
Titel
Zitiert von
Zitiert von
Jahr
Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning
X Chen, Y Xie, Y Sheng, H Tang, Z Wang, Y Wang, Y Wang, F Liao, J Ma, ...
Nature Communications 12 (1), 5953, 2021
762021
Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide
L Tong, J Wan, K Xiao, J Liu, J Ma, X Guo, L Zhou, X Chen, Y Xia, S Dai, ...
Nature Electronics 6 (1), 37-44, 2023
722023
A 619-pixel machine vision enhancement chip based on two-dimensional semiconductors
S Ma, T Wu, X Chen, Y Wang, J Ma, H Chen, A Riaud, J Wan, Z Xu, ...
Science Advances 8 (31), eabn9328, 2022
462022
Pass‐transistor logic circuits based on wafer‐scale 2D semiconductors
X Wang, X Chen, J Ma, S Gou, X Guo, L Tong, J Zhu, Y Xia, D Wang, ...
Advanced Materials 34 (48), 2202472, 2022
362022
Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors
Y Xia, L Zong, Y Pan, X Chen, L Zhou, Y Song, L Tong, X Guo, J Ma, ...
Small 18 (20), 2107650, 2022
282022
Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Y Sheng, X Chen, F Liao, Y Wang, J Ma, J Deng, Z Guo, S Bu, H Shen, ...
Advanced Electronic Materials 7 (7), 2000395, 2021
272021
Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors
J Ma, X Chen, Y Sheng, L Tong, X Guo, M Zhang, C Luo, L Zong, Y Xia, ...
Journal of Materials Science & Technology 106, 243-248, 2022
192022
Engineering top gate stack for wafer-scale integrated circuit fabrication based on two-dimensional semiconductors
J Ma, X Chen, X Wang, J Bian, L Tong, H Chen, X Guo, Y Xia, X Zhang, ...
ACS Applied Materials & Interfaces 14 (9), 11610-11618, 2022
132022
Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS2 Materials With Physical and SPICE Model
S Ma, Y Wang, X Chen, T Wu, X Wang, H Tang, Y Yao, H Yu, Y Sheng, ...
IEEE Access 8, 197287-197299, 2020
82020
Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors
X Guo, H Chen, J Bian, F Liao, J Ma, S Zhang, X Zhang, J Zhu, C Luo, ...
Nano Research 15 (7), 6620-6627, 2022
72022
Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors
L Tong, X Guo, Z Shen, L Zhou, J Ma, X Chen, H Chen, Y Xia, C Sheng, ...
Journal of Materials Science & Technology 133, 230-237, 2023
52023
Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate
X Guo, D Wang, D Zhang, J Ma, X Wang, X Chen, L Tong, X Zhang, J Zhu, ...
Nanotechnology 35 (4), 045201, 2023
32023
Analog and logic circuits fabricated on a wafer-scale two-dimensional semiconductor
X Wang, X Chen, J Ma, H Chen, S Gou, X Guo, L Tong, Y Xia, Z Xu, ...
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
32022
Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering
J Ma, L Tong, X Guo, X Chen, M Zhang, C Wu, W Bao
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
22021
Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization
X Chen, Y Sun, L Tong, S Zhang, X Li, J Ma, X Guo, M Zhang, Z Sun, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
12021
Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022)
X Wang, X Chen, J Ma, S Gou, X Guo, L Tong, J Zhu, Y Xia, D Wang, ...
Advanced Materials 34 (48), 2270334, 2022
2022
Abnormal device performance in transferred multilayer MoS2 field-effect transistors
L Tong, J Ma, X Chen, X Guo, S Gou, Y Xia, D Wang, H Chen, W Bao
2021 International Semiconductor Conference (CAS), 187-190, 2021
2021
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